首頁 >IPS-M210A-LFA-SE>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

iPS-M210A-LFA-SE

210 Wh Industrial Power Storage System with Lithium-Iron Phosphate Cell

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國）有限公司

IPS-M210A-LID-SE

210WhIntelligentPowerStorageSystem

Features ?Containsenvironmentally-friendly,longlifecyclerechargeablebatteries ?170WDCoutputforintegrationofvariousdevices ?Fanlessdesignforhospitalenvironment ?Swappablebatterypackdesignforquickandeasyreplacement ?2VDCoutputwithsimultaneouspowersupport ?Sa

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國）有限公司

iPS-M210-LFA-SE

210WhIndustrialPowerStorageSystemwithLithium-IronPhosphateCell

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國）有限公司

IPS-M210-LID-SE

210WhIntelligentPowerStorageSystem

Features ?Containsenvironmentally-friendly,longlifecyclerechargeablebatteries ?170WDCoutputforintegrationofvariousdevices ?Fanlessdesignforhospitalenvironment ?Swappablebatterypackdesignforquickandeasyreplacement ?2VDCoutputwithsimultaneouspowersupport ?Sa

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國）有限公司

IPS-M210S

210WhIntelligentPowerStorageSystem

Features ?Containsenvironmentally-friendly,longlifecyclerechargeablebatteries ?170WDCoutputforintegrationofvariousdevices ?Fanlessdesignforhospitalenvironment ?Swappablebatterypackdesignforquickandeasyreplacement ?2VDCoutputwithsimultaneouspowersupport ?Sa

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國）有限公司

IQOV-210F

OCXOSpecification

IQD

IQD Frequency Products Ltd

IQXT-210

VCTCXOSpecification

IQD

IQD Frequency Products Ltd

IRFD210

PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=0.60A)

DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedin

IRF

International Rectifier

IRFD210

0.6A,200V,1.500Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFD210

0.6AAND0.45A,150VAND200V,1.5AND2.4OHM,N-CHANNELPOWERMOSFETS

TheseareadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching

HARRIS

Harris Corporation

IRFD210

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD210

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD210PBF

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedin

IRF

International Rectifier

IRFD210PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD210PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE210

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET-R??RANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners

IRF

International Rectifier

IRFE210

SimpleDriveRequirements

IRF

International Rectifier

IRFF210

2.2A,200V,1.500Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFF210

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe

IRF

International Rectifier

IRFF210

N-ChannelMOSFETinaHermeticallysealedTO39

N-ChannelMOSFETinaHermeticallysealedTO39MetalPackage. N-ChannelMOSFET. VDSS=200V ID=2.25A RDS(ON)=1.5?

SEME-LAB

Seme LAB

供應(yīng)商型號品牌批號封裝庫存備注價格
DRAL
05+
原廠原裝
6705
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
IR
24+
TO-223
1000
詢價
IR
17+
SOT-23
6200
詢價
IR
22+
17+
6000
終端可免費供樣,支持BOM配單
 詢價
INFINEON/英飛凌
23+
SOT-23
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
IR
23+
17+
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
17+
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
17+
7000
詢價
IR
24+
SOP8
39
原裝現(xiàn)貨假一賠十
 詢價
IR
23+
SOP8
4500
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
更多IPS-M210A-LFA-SE供應(yīng)商 更新時間2025-1-9 17:52:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多