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IRFF210中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFF210
廠商型號(hào)

IRFF210

功能描述

2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET

文件大小

325.79 Kbytes

頁(yè)面數(shù)量

7 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-26 17:47:00

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IRFF210規(guī)格書詳情

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features

? 2.2A, 200V

? rDS(ON) = 1.500?

? Single Pulse Avalanche Energy Rated

? SOA is Power Dissipation Limited

? Nanosecond Switching Speeds

? Linear Transfer Characteristics

? High Input Impedance

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    IRFF210

  • 制造商:

    International Rectifier

  • 功能描述:

    TRANS MOSFET N-CH 200V 2.25A 3PIN TO-39 - Bulk

  • 功能描述:

    N CH MOSFET, 200V, 2.25A, TO-205AF; Transistor

  • Polarity:

    N Channel; Continuous Drain Current

  • Id:

    2.25A; Drain Source Voltage

  • Vds:

    200V; On Resistance

  • Rds(on):

    1.5ohm; Rds(on) Test Voltage

  • Vgs:

    10V; Threshold Voltage Vgs

  • Typ:

    4V ;RoHS

  • Compliant:

    No

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