IRFD210中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書
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更多IRFD210規(guī)格書詳情
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Features
? 0.6A, 200V
? rDS(ON) = 1.500?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號(hào)：
IRFD210
- 功能描述：
MOSFET N-Chan 200V 0.6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
19+ |
74862 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價(jià) | |||
IR |
2020+ |
DIP |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
IR |
2016+ |
DIP4 |
6528 |
只做進(jìn)口原裝現(xiàn)貨!假一賠十! |
詢價(jià) | ||
IR |
22+ |
HD-1 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
IR |
2021+ |
SMD |
100500 |
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
Vishay Siliconix |
2022+ |
4-DIP(0.300 |
38550 |
詢價(jià) | |||
IR |
23+ |
DIP4 |
7000 |
詢價(jià) | |||
IR |
DIP-4 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
24+ |
DIP4 |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
IOR |
24+ |
DIP-4P |
79 |
詢價(jià) |
