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IPB60R125C6

Marking：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB60R125C6

Marking：6R125C6；Package：PG-TO263；MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R125C6

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R125C6

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R125C6_14

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R125C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R125C6

MOSFETMetalOxideSemiconductorFieldEffectTransistor

Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R125C6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.125? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustd

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP60R125C6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R125C6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤125m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IPB60R125C6

  • 功能描述：

    MOSFET 600V CoolMOS C6 Power Transistor

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
2021+
SOT-263
17059
原裝進(jìn)口假一罰十
 詢價
INFINEON
2021+
9450
原裝現(xiàn)貨。
 詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
英飛翎
17+
D2PAK(TO-263)
31518
原裝正品 可含稅交易
 詢價
Infineon(英飛凌)
23+
TO-263
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
INFINEON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
INFINEON
2016+
TO-263
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價
INFINEON
1708+
D2PAK(TO-263)
7500
只做原裝進(jìn)口,假一罰十
 詢價
INFINE0N
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
ON
18+
TO-263
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
 詢價
更多IPB60R125C6供應(yīng)商 更新時間2025-2-26 16:46:00

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