精品偷拍日韩第一页,99热这里只有精品国产首页

首頁 >IPA65R660CFD>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IPA65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650V CoolMOS CFD Power Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPA65R660CFD	文件：4.46997 Mbytes Page：21 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPA65R660CFD	文件：269.89 Kbytes Page：2 Pages	Isc N-Channel MOSFET Transistor ?FEATURES ?WithTO-220FPackage ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.66Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplicati	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPB65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB65R660CFD	文件：189.21 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPB65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB65R660CFDA	文件：2.34202 Mbytes Page：15 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPD65R660CFD	文件：335.3 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?Highcommutationruggedness ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.66? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPD65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPD65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPD65R660CFDA	文件：1.42987 Mbytes Page：14 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R660CFD	文件：330.89 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.66? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPI65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R660CFD	文件：338.51 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.66? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPP65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R660CFDA	文件：2.34202 Mbytes Page：15 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon

12 >>>

詳細(xì)參數(shù)

型號(hào)：
IPA65R660CFD
功能描述：
MOSFET N-CH 650V 6.0A TO220
RoHS：
是
類別：
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
系列：
CoolMOS™
標(biāo)準(zhǔn)包裝：
1,000
系列：
MESH OVERLAY™ FET
型：
MOSFET N 通道，金屬氧化物 FET
特點(diǎn)：
邏輯電平門
漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
C：
18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°
C：
180 毫歐 @ 9A，10V Id 時(shí)的
Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
Vgs：
72nC @ 10V 輸入電容(Ciss) @
Vds：
1560pF @ 25V 功率 -
最大：
40W
安裝類型：
通孔
封裝/外殼：
TO-220-3 整包
供應(yīng)商設(shè)備封裝：
TO-220FP
包裝：
管件

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市訊順達(dá)科技有限公司	IPA65R660CFD	INFINEON	20+	TO-220	20000	全新原裝公司現(xiàn)貨	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	IPA65R660CFD	Infineon(英飛凌)	23+	N/A	12000	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
深圳市特萊科技有限公司	IPA65R660CFD	INFINEON/英飛凌	21+23+	TO-220FullPAK	28523	16年電子元件現(xiàn)貨供應(yīng)商終端BOM表可配單提供樣品	詢價(jià)
深圳市能創(chuàng)芯電子科技有限公司	IPA65R660CFD	INFINEON	23+	TO-220	20000	進(jìn)口原裝現(xiàn)貨	詢價(jià)
深圳市中聯(lián)芯電子有限公司	IPA65R660CFD	INFINEON	24+	TO-220	10000	只做原裝有掛有貨假一賠十	詢價(jià)
深圳市高捷芯城科技有限公司	IPA65R660CFD	Infineon(英飛凌)	23+	TO-220	17048	原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div>	詢價(jià)
深圳市得捷芯城科技有限公司	IPA65R660CFD	Infineon(英飛凌)	23+	TO-220	21316	正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊	詢價(jià)
柒號(hào)芯城電子商務(wù)(深圳)有限公司	IPA65R660CFD	INFINEON	2024+	N/A	70000	柒號(hào)只做原裝現(xiàn)貨價(jià)秒殺全網(wǎng)	詢價(jià)
深圳市卓越微芯電子有限公司	IPA65R660CFD	INFINEO	2020+	TO-220F	40	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市達(dá)恩科技有限公司	IPA65R660CFD	Infineon	18+	NA	3530	進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190	詢價(jià)

更多IPA65R660CFD供應(yīng)商更新時(shí)間2024-10-24 18:02:00

詳細(xì)參數(shù)

相關(guān)規(guī)格書

相關(guān)庫存