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IPW65R660CFD

650V CoolMOS CFD Power Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R660CFD

Marking：65F6660；Package：PG-TO247；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R660CFD

N-Channel MOSFET Transistor

?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤660m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

HCD65R660S

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HCD65R660S

650VN-ChannelSuperJunctionMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HCS65R660S

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HCU65R660S

650VN-ChannelSuperJunctionMOSFET

SEMIHOW

SemiHow Co.,Ltd.

IIPD65R660CFD

N-ChannelMOSFETTransistor

?DESCRITION ?Highcommutationruggedness ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.66? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IIPP65R660CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.66? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IIPW65R660CFD

N-ChannelMOSFETTransistor

?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤660m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IPW65R660CFD

  • 功能描述：

    MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon(英飛凌)
24+
標(biāo)準(zhǔn)封裝
7073
原廠渠道供應(yīng),大量現(xiàn)貨,原型號(hào)開票。
 詢價(jià)
Infineon
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
Infineon(英飛凌)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價(jià)
INFINEON/英飛凌
23+
TO247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
INFINEON
21+
TO247
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
INFINEON/英飛凌
2022+
TO-247
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
INFINEON/英飛凌
23+
TO247
9990
原裝正品，支持實(shí)單
 詢價(jià)
INFINEON/英飛凌
22+
TO247
50000
只做原裝正品,假一罰十,歡迎咨詢
 詢價(jià)
INFINEON
1237+
TO247
7730
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
INFINEON
原廠封裝
1000
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢價(jià)
更多IPW65R660CFD供應(yīng)商 更新時(shí)間2025-4-12 11:55:00

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