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首頁 >IPI65R660CFD>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IPI65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650V CoolMOS CFD Power Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R660CFD	文件：4.46997 Mbytes Page：21 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R660CFD	文件：330.89 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.66? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IPP65R660CFD	文件：338.51 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.66? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IPP65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R660CFDA	文件：2.34202 Mbytes Page：15 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPW65R660CFD	文件：334.83 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤660m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IPX65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPX65R660CFDA	文件：2.34202 Mbytes Page：15 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon

詳細參數(shù)

型號：
IPI65R660CFD
功能描述：
MOSFET Infineon COOL MOS
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導通）：
0.014 Ohms
配置：
Single
安裝風格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市華來深電子有限公司	IPI65R660CFD	INFINE0N	23+	TO-262-3	11846	一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價
深圳市國宇半導體科技有限公司	IPI65R660CFD	INFINEON/英飛凌	23+	TO262	10000	公司只做原裝正品	詢價
深圳市創(chuàng)新跡電子有限公司	IPI65R660CFD	INFINEON	23+	TO-262	8000	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳市安富世紀電子有限公司	IPI65R660CFD	INFINEON	23+	TO-262	8000	專注配單,只做原裝進口現(xiàn)貨	詢價
天津市博通航睿技術有限公司	IPI65R660CFD	INFINEON	23+	TO-262	7000		詢價
深圳和潤天下電子科技有限公司	IPI65R660CFD	INFINEON/英飛凌	22+	TO262	92902		詢價
深圳市艾宇欣科技有限公司	IPI65R660CFDXKSA1	Infineon	1931+	N/A	493	加我qq或微信，了解更多詳細信息,體驗一站式購物	詢價
深圳市科雨電子有限公司	IPI65R660CFDXKSA1	INFINEON	1809+	TO262-3	3675	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳市易訊博科技有限公司	IPI65R660CFDXKSA1	Infineon	22+	NA	493	加我QQ或微信咨詢更多詳細信息,	詢價
深圳市河鋒鑫科技有限公司	IPI65R660CFDXKSA1	Infineon Technologies	22+	TO2623 Long Leads I2Pak TO262A	9000	原廠渠道,現(xiàn)貨配單	詢價

更多IPI65R660CFD供應商更新時間2024-12-31 14:47:00

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