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IPI65R660CFD中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書

IPI65R660CFD
廠商型號

IPI65R660CFD

功能描述

Metal Oxide Semiconductor Field Effect Transistor

文件大小

4.46997 Mbytes

頁面數(shù)量

21

生產(chǎn)廠商 Infineon Technologies AG
企業(yè)簡稱

Infineon英飛凌

中文名稱

英飛凌科技股份公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-22 16:30:00

IPI65R660CFD規(guī)格書詳情

Description

CoolMOS? is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS? CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler

Features

? Ultra-fast body diode

? Very high commutation ruggedness

? Extremely low losses due to very low FOM Rdson*Qg and Eoss

? Easy to use/drive

???????? Qualified for industrial grade applications according to JEDEC?

? ?(J-STD20 and JESD22)

? Pb-free plating, Halogen free mold compound

Applications

? 650V CoolMOS? CFD2 is especially suitable for resonant switching PWM

? stages for e.g. PC Silverbox, LCD TV, Lighting, Server, Telecom, and Solar.

產(chǎn)品屬性

  • 型號:

    IPI65R660CFD

  • 功能描述:

    MOSFET Infineon COOL MOS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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