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IRF530NPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF530NPBF

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100RgTested APPLICATIONS ?IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRF530NS

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF530NS

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF530NS

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530NS

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF530NS

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100RgTested APPLICATIONS ?IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRF530NSPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530NSPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF530NSTRLPBF

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IN530EM

  • 制造商：

    Hubbell Premise Wiring

  • 制造商：

    Hubbell Wiring Device-Kellems

  • 功能描述：

    PS, IEC, REPL, INTERIOR, 5W, 20A

供應(yīng)商型號品牌批號封裝庫存備注價格
2000
15
詢價
23+
NA
550
專做原裝正品,假一罰百!
 詢價
ON
23+
DIP
40000
全新原裝深圳現(xiàn)貨庫存,特價·
 詢價
MOT
23+
DIP
5000
原裝正品,假一罰十
 詢價
MOT
23+
DIP
3000
全新原裝假一賠十
 詢價
VISHAYMAS
25+23+
DIP
51778
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
ON/安森美
21+
30000
百域芯優(yōu)勢 實單必成 可開13點增值稅
 詢價
ON/安森美
23+
DIP
69000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
ON
23+
DIP
53325
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
VISHAY/威世
24+
DIP
50000
只做原裝，歡迎詢價，量大價優(yōu)
 詢價
更多IN530EM供應(yīng)商 更新時間2025-6-28 8:01:00

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