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IRF530

TO-220-3LPlastic-EncapsulateMOSFETS

FEATURES LowRDS(on) VGSRatedat ± 20V SiliconGateforFastSwitchingSpeed Rugged LowDriveRequirements DESCRITION Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersupplies,UPS,ACandDC motorcontrols,relayandsolenoiddrivers.

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

IRF530

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

APPLICATIONS nHIGHCURRENT,HIGHSPEEDSWITCHING nSOLENOIDANDRELAYDRIVERS nDC-DC&DC-ACCONVERTER nAUTOMOTIVEENVIRONMENT(INJECTION, ABS,AIR-BAG,LAMPDRIVERSEtc.)

SYC

SYC Electronica

IRF530A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.092Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF530A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF530FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS N-channelenhancementmodePOWERMOSfieldeffecttransistors.EasydriveandveryfastswitchingtimesmakethesePOWERMOStransistorsidealforhighspeedswitchingapplications.ApplicationsincludeDC/DCconverters,UPSbatterychargers,s

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

IRF530FI

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

IRF530FI

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF530FP

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.12? ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■AVALANCHERUGGEDTECHNOLOGY ■APPLICATIONORIENTEDCHARACTERIZATION ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE APPLICAT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

IRF530L

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF530N

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology.TheIRF530NissuppliedintheSOT78(TO220AB)conventionalleadedpackage. 1.’Trench’technology 2.Lowon-stateresistance 3.Fastswitching 4.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

詳細參數(shù)

  • 型號：

    IN530EM

  • 制造商：

    Hubbell Premise Wiring

  • 制造商：

    Hubbell Wiring Device-Kellems

  • 功能描述：

    PS, IEC, REPL, INTERIOR, 5W, 20A

供應(yīng)商型號品牌批號封裝庫存備注價格
2000
15
詢價
23+
NA
550
專做原裝正品,假一罰百!
 詢價
ON
23+
DIP
40000
全新原裝深圳現(xiàn)貨庫存,特價·
 詢價
MOT
23+
DIP
5000
原裝正品,假一罰十
 詢價
MOT
23+
DIP
3000
全新原裝假一賠十
 詢價
VISHAYMAS
25+23+
DIP
51778
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
ON/安森美
21+
30000
百域芯優(yōu)勢 實單必成 可開13點增值稅
 詢價
ON/安森美
23+
DIP
69000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
ON
23+
DIP
53325
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
VISHAY/威世
24+
DIP
50000
只做原裝，歡迎詢價，量大價優(yōu)
 詢價
更多IN530EM供應(yīng)商 更新時間2025-6-28 8:01:00

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