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IRF530

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技威世科技半導體

IRF530

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF530

TO-220-3LPlastic-EncapsulateMOSFETS

FEATURES LowRDS(on) VGSRatedat ± 20V SiliconGateforFastSwitchingSpeed Rugged LowDriveRequirements DESCRITION Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersupplies,UPS,ACandDC motorcontrols,relayandsolenoiddrivers.

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

IRF530A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.092Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF530A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF530FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS N-channelenhancementmodePOWERMOSfieldeffecttransistors.EasydriveandveryfastswitchingtimesmakethesePOWERMOStransistorsidealforhighspeedswitchingapplications.ApplicationsincludeDC/DCconverters,UPSbatterychargers,s

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRF530FI

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRF530FI

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF530FP

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.12? ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■AVALANCHERUGGEDTECHNOLOGY ■APPLICATIONORIENTEDCHARACTERIZATION ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE APPLICAT

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRF530L

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

供應商型號品牌批號封裝庫存備注價格
IR
22+
TO-220
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-220
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-220
7000
詢價
VISHAY
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IFM
23+
SENSOR
128
全新、原裝
 詢價
ST意法
20+
LGA12
17000
加速度計,只做全新原裝
 詢價
ST/意法
23+
VFLGA-12221
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
STMICROELECTRONICS
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價
ST
24+
VFLGA-12221
200000
原裝進口正口,支持樣品
 詢價
更多IIRF530N供應商 更新時間2025-4-15 10:00:00

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