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IIRFP054N

N-Channel MOSFET Transistor

?DESCRITION ?UltraLowOn-resistance ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤12m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRCP054

HEXFETPOWERMOSFET

IRF

International Rectifier

IRF054

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-204AA/AE)

60V,N-CHANNEL TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superior

IRF

International Rectifier

IRF054

RepetitiveAvalancheRatings

IRF

International Rectifier

IRF054

SimpleDriveRequirements

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF054

60V,N-CHANNEL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF054SMD

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFIP054

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFM054

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFM054

POWERMOSFETTHRU-HOLE(TO-254AA)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFM054

SimpleDriveRequirements

IRF

International Rectifier

IRFN054

POWERMOSFETN-CHANNEL(BVdss=60V,Rds(on)=0.020ohm,Id=55A*)

RDS(on)0.020? ID55A* HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-estab

IRF

International Rectifier

IRFN054

SimpleDriveRequirements

IRF

International Rectifier

IRFN054SMD

N-CHANNELPOWERMOSFET

VDSS60V ID(cont)45A RDS(on)0.027? FEATURES ?HERMETICALLYSEALEDSURFACEMOUNTPACKAGE ?SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT ?HIGHPACKINGDENSITIES

SEME-LAB

Seme LAB

IRFP054

PowerMOSFET(Vdss=60V,Rds(on)=0.014ohm,Id=70*A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRF

International Rectifier

IRFP054

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP054

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP054

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP054

PowerMOSFET

TFUNKVishay Telefunken

威世威世（VISHAY）集團(tuán)

IRFP054

N-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrent–ID=70A@TC=25℃ ?DrainSourceVoltage-:VDSS=60V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.014Ω(Max) ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
VISHAY
12+
TO-252
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
VISHAY/威世
21+
TO-252
30000
只做正品原裝現(xiàn)貨
 詢價(jià)
IR
22+
TO-251
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO-251
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-251
7000
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
ST意法
20+
LGA12
17000
加速度計(jì),只做全新原裝
 詢價(jià)
ST/意法
23+
VFLGA-12221
3000
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價(jià)
ST
22+
VFLGA-12221
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
 詢價(jià)
STMICROELECTRONICS
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價(jià)
更多IIRFP054N供應(yīng)商 更新時(shí)間2024-12-23 11:04:00

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