| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IIRF9530N | P-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
PCIXI/OSystemClockGeneratorwithEMIControlFeatures Features ?Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter ?Inputclockfrequencyof25MHzto33.3MHz ?OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 ?Outputgroupedintwobanksoffiveclockseach ?OneREFXINclockoutput ?SMBusclockcontrolinterfac | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
PCIXI/OSystemClockGeneratorwithEMIControlFeatures Features ?Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter ?Inputclockfrequencyof25MHzto33.3MHz ?OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 ?Outputgroupedintwobanksoffiveclockseach ?OneREFXINclockoutput ?SMBusclockcontrolinterfac | SILABS Silicon Laboratories | SILABS | ||
PCIXI/OSystemClockGeneratorwithEMIControlFeatures Features ?Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter ?Inputclockfrequencyof25MHzto33.3MHz ?OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 ?Outputgroupedintwobanksoffiveclockseach ?OneREFXINclockoutput ?SMBusclockcontrolinterfac | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
PCIXI/OSystemClockGeneratorwithEMIControlFeatures Features ?Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter ?Inputclockfrequencyof25MHzto33.3MHz ?OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 ?Outputgroupedintwobanksoffiveclockseach ?OneREFXINclockoutput ?SMBusclockcontrolinterfac | SILABS Silicon Laboratories | SILABS | ||
PCIXI/OSystemClockGeneratorwithEMIControlFeatures Features ?Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter ?Inputclockfrequencyof25MHzto33.3MHz ?OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 ?Outputgroupedintwobanksoffiveclockseach ?OneREFXINclockoutput ?SMBusclockcontrolinterfac | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
PCIXI/OSystemClockGeneratorwithEMIControlFeatures Features ?Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter ?Inputclockfrequencyof25MHzto33.3MHz ?OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 ?Outputgroupedintwobanksoffiveclockseach ?OneREFXINclockoutput ?SMBusclockcontrolinterfac | SILABS Silicon Laboratories | SILABS | ||
PCIXI/OSystemClockGeneratorwithEMIControlFeatures Features ?Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter ?Inputclockfrequencyof25MHzto33.3MHz ?OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 ?Outputgroupedintwobanksoffiveclockseach ?OneREFXINclockoutput ?SMBusclockcontrolinterfac | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
PCIXI/OSystemClockGeneratorwithEMIControlFeatures Features ?Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter ?Inputclockfrequencyof25MHzto33.3MHz ?OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 ?Outputgroupedintwobanksoffiveclockseach ?OneREFXINclockoutput ?SMBusclockcontrolinterfac | SILABS Silicon Laboratories | SILABS | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
12A,100V,0.300Ohm,P-ChannelPowerMOSFETs 12A,100V,0.300Ohm,P-ChannelPowerMOSFETs TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe | Intersil Intersil Corporation | Intersil | ||
TRANSISTORS Features: ■P-ChannelVersatility ■CompactPlasticPackage ■FastSwitching ■LowDriveCurrent ■EaseofParalleling ■ExcellentTemperatureStability | IRF International Rectifier | IRF | ||
P-ChannelMOSFET ■Features ●VDS(V)=-100V ●ID=-13A(VGS=-10V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetp | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscP-ChannelMosfetTransistor FEATURES ·DrainCurrent:ID=-12A@TC=25℃ ·DrainSourceVoltage :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A) VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
TO-220 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
7000 |
詢價(jià) | |||
VISHAY |
12+ |
TO-252 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
VISHAY/威世 |
21+ |
TO-252 |
30000 |
只做正品原裝現(xiàn)貨 |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
ifm electronic |
7162+ |
con |
5 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格 |
詢價(jià) | ||
ST意法 |
20+ |
LGA12 |
17000 |
加速度計(jì),只做全新原裝 |
詢價(jià) | ||
ST/意法 |
23+ |
VFLGA-12221 |
3000 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
ST |
22+ |
VFLGA-12221 |
16900 |
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持! |
詢價(jià) |
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