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IDT70T631S12BFI

HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM

IDT

Integrated Device Technology, Inc.

70T631S12BC

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T631S12BCG

ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T631S12BCG

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T631S12BCGI

ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T631S12BCGI

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T631S12BCI

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T631S12BF

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T631S12BFG

ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T631S12BFG

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T631S12BFGI

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T631S12BFGI

ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T631S12BFI

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT70T631S12BC

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM

IDT

Integrated Device Technology, Inc.

IDT70T631S12BCI

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM

IDT

Integrated Device Technology, Inc.

IDT70T631S12BF

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM

IDT

Integrated Device Technology, Inc.

IDT70T631S12DD

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM

IDT

Integrated Device Technology, Inc.

IDT70T631S12DDI

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM

IDT

Integrated Device Technology, Inc.

詳細參數(shù)

  • 型號:

    IDT70T631S12BFI

  • 功能描述:

    IC SRAM 4MBIT 12NS 208FBGA

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲器

  • 系列:

    -

  • 標準包裝:

    3,000

  • 系列:

    - 格式 -

  • 存儲器:

    EEPROMs - 串行

  • 存儲器類型:

    EEPROM

  • 存儲容量:

    8K(1K x 8)

  • 速度:

    400kHz

  • 接口:

    I²C,2 線串口

  • 電源電壓:

    1.7 V ~ 5.5 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    8-SOIC(0.154,3.90mm 寬)

  • 供應(yīng)商設(shè)備封裝:

    8-SOIC

  • 包裝:

    帶卷(TR)

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IDT
24+
208FBGA
7615
原裝現(xiàn)貨
詢價
IDT
22+
TQFP144
1280
長期原裝現(xiàn)貨,特價供應(yīng)!
詢價
IDT
23+
144-TQFP(20x20)
1389
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
詢價
IDT, Integrated Device Technol
21+
144-TQFP(20x20)
56200
一級代理/放心采購
詢價
IDT
20+
QFP-144
1001
就找我吧!--邀您體驗愉快問購元件!
詢價
IDT
22+
144TQFP
9000
原廠渠道,現(xiàn)貨配單
詢價
IDT
21+
144TQFP
13880
公司只售原裝,支持實單
詢價
IDT
23+
144TQFP
9000
原裝正品,支持實單
詢價
IDT, Integrated Device Techno
23+
144-TQFP20x20
7300
專注配單,只做原裝進口現(xiàn)貨
詢價
更多IDT70T631S12BFI供應(yīng)商 更新時間2024-11-20 15:55:00