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FQA20N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=19.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQA20N40

400VN-ChannelMOSFET

Features ?19.5A,400V,RDS(on)=0.22?@VGS=10V ?Lowgatecharge(typical60nC) ?LowCrss(typical45pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MGP20N40CL

SMARTDISCRETESInternallyClamped,N-ChannelIGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGP20N40CL

SMARTDISCRETESInternallyClamped,N-ChannelIGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C

Motorola

Motorola, Inc

SDM20N40A

DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE

DIODES

Diodes Incorporated

SDM20N40A

DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE

Features ?LowForwardVoltageDrop ?CommonAnodeConfiguration ?LeadFreeByDesign/RoHSCompliant(Note3) ?GreenDevice(Note4)

DIODES

Diodes Incorporated

SGR20N40L

Highinputimpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGR20N40L

GeneralDescription

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGU20N40

Highinputimpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGU20N40L

Highinputimpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

STGB20N40LZ

Lowsaturationvoltage

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGD20N40LZ

Lowsaturationvoltage

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

供應(yīng)商型號品牌批號封裝庫存備注價格
FEIHONG/飛虹
22+23+
TO-220
89635
代理假一罰十全新原裝現(xiàn)貨可送貨
 詢價
FH/飛虹
TO-220
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價
FH/風(fēng)華高科
22+
TO-220
18000
只做全新原裝,支持BOM配單,假一罰十
 詢價
FeiHong(飛虹)
2112+
TO-220
105000
50個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價
FeiHong(飛虹)
20+
TO-220
50
詢價
FeiHong(飛虹)
23+
TO220
6000
誠信服務(wù)，絕對原裝原盤
 詢價
24+
N/A
61000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
SAMTEC/申泰
23+
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
SAMTEC/申泰
22+24+
CONN
78950
16年現(xiàn)貨供應(yīng)商SAMTEC/申泰連接器
 詢價
SMC
9723
2
公司優(yōu)勢庫存 熱賣中!
 詢價
更多FHP20N40供應(yīng)商 更新時間2024-11-7 8:10:00

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