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SGU20N40L

High input impedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGU20N40LTU

Package:TO-251-3 短引線,IPak,TO-251AA;包裝:管件 類別:分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 400V 45W IPAK

ONSEMION Semiconductor

安森美半導體安森美半導體公司

20N40

400V,23AN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

20N40CL

SMARTDISCRETESInternallyClamped,N-ChannelIGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

20N40H

20A竊?00VN-CHANNELMOSFET

KIAKIA Semiconductor Technology

可易亞半導體廣東可易亞半導體科技有限公司

20N40K-MT

N-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

AOTF20N40

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

AOTF20N40

400V,20AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

FDH20N40

20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET

Features ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ?ReducedrDS(ON) ?ReducedMillerCapacitanceandLowInputCapacitance ?ImprovedSwitchingSpeedwithLowEMI ?175°CRatedJunctionTemperature pp SwitchMo

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDH20N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.216Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitch

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDP20N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=45A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.02Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDP20N40

20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET

Features ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ?ReducedrDS(ON) ?ReducedMillerCapacitanceandLowInputCapacitance ?ImprovedSwitchingSpeedwithLowEMI ?175°CRatedJunctionTemperature pp SwitchMo

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA20N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=19.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQA20N40

400VN-ChannelMOSFET

Features ?19.5A,400V,RDS(on)=0.22?@VGS=10V ?Lowgatecharge(typical60nC) ?LowCrss(typical45pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MGP20N40CL

SMARTDISCRETESInternallyClamped,N-ChannelIGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MGP20N40CL

SMARTDISCRETESInternallyClamped,N-ChannelIGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

SDM20N40A

DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE

DIODES

Diodes Incorporated

SDM20N40A

DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE

Features ?LowForwardVoltageDrop ?CommonAnodeConfiguration ?LeadFreeByDesign/RoHSCompliant(Note3) ?GreenDevice(Note4)

DIODES

Diodes Incorporated

SGR20N40L

GeneralDescription

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SGR20N40L

Highinputimpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數(shù)

  • 型號:

    SGU20N40L

  • 制造商:

    FAIRCHILD

  • 制造商全稱:

    Fairchild Semiconductor

  • 功能描述:

    High input impedance

供應商型號品牌批號封裝庫存備注價格
24+
TO-251-3
8866
詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
FAIRCHILD
1822+
TO-251
6852
只做原裝正品假一賠十為客戶做到零風險!!
詢價
FAIRCHILD/仙童
23+
TO-251
10000
公司只做原裝正品
詢價
FAIRCHILD/仙童
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
FAIRCHILD/仙童
21+
TO-252
10000
原裝現(xiàn)貨假一罰十
詢價
FAIRCHILD/仙童
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
FAIRCHILD/仙童
2022+
TO-252
29880
原廠代理 終端免費提供樣品
詢價
FAIRCHILD/仙童
23+
TO-251
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價
FAIRCHILD/仙童
22+
TO-251
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
更多SGU20N40L供應商 更新時間2025-1-18 15:30:00