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CEM-1612

MAGNETIC BUZZER TRANSDUCER

FEATURES ?throughhole ?12Vrated ?externallydriven

CUI

CUI Inc.

CEM-1612_V01

MAGNETIC BUZZER TRANSDUCER

FEATURES ?throughhole ?12Vrated ?externallydriven

CUI

CUI Inc.

CEM2005

Dual Enhancement Mode Field Effect Transistor(N and Channel)

FEATURES ■20V,5A,RDS(ON)=32m?@VGS=4.5V. RDS(ON)=43m?@VGS=2.5V. ■-20V,-4A,RDS(ON)=95m?@VGS=-4.5V. RDS(ON)=125m?@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM2030A

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ■20V,6A,RDS(ON)=30m?@VGS=4.5V. RDS(ON)=40m?@VGS=2.5V. ■-20V,-4.3A,RDS(ON)=90m?@VGS=-4.5V. RDS(ON)=120m?@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM2082

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,11A,RDS(ON)=12m?@VGS=4.5V. RDS(ON)=18m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM2108

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,9.5A,RDS(ON)=14m?@VGS=4.5V. RDS(ON)=20m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM2133

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-10A,RDS(ON)=18mΩ@VGS=-4.5V. RDS(ON)=27mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM2133

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-10A,RDS(ON)=18mW@VGS=-4.5V. RDS(ON)=27mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM2152

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,9.0A,RDS(ON)=20mW@VGS=4.5V. RDS(ON)=26mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM2163

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-8.9A,RDS(ON)=20m?@VGS=-4.5V. RDS(ON)=30m?@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

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CET/華瑞
20+
SO-8
120000
原裝正品 可含稅交易
 詢價(jià)
VBSEMI/臺(tái)灣微碧
23+
SOP8
50000
全新原裝正品現(xiàn)貨,支持訂貨
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CET/華瑞
23+
SOP8
3000
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
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VBsemi
21+
SOP8
10026
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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CET/華瑞
2022+
SOP-8
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
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VBsemi
23+
SOP8
10065
原裝正品,有掛有貨,假一賠十
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CET/華瑞
23+
SO-8
360000
交期準(zhǔn)時(shí)服務(wù)周到
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VB
25+
SO-8
10049
原裝正品,假一罰十!
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TI
24+
DIP
9480
公司現(xiàn)貨庫存,支持實(shí)單
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VBSEMI/臺(tái)灣微碧
24+
SOP8
60000
詢價(jià)
更多CEM供應(yīng)商 更新時(shí)間2025-4-1 14:00:00

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