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CEM0415

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,4A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. RDS(ON)=95mW@VGS=6V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM0615A

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,4.6A,RDS(ON)=65mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM0615L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,4.6A,RDS(ON)=65mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=82mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM0715

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,5.3A,RDS(ON)=48mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Pb-freeleadplating;RoHScompliant. HalogenFree. PoE. Telecom. DC/DCconverter. Applications

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM1008

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,2.8A,RDS(ON)=125mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM1008SL

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,2.9A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RDS(ON)=130mW@VGS=5V. RDS(ON)=145mW@VGS=3V. Pb-freeleadplating;RoHScompliant. HalogenFree. Applicati

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM1010

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,9.5A,RDS(ON)=15.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM1010

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,9.5A,RDS(ON)=15.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM11C2

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ●30V,7A,RDS(ON)=30m?@VGS=10V. RDS(ON)=42m?@VGS=4.5V. -20V,-4.3A,RDS(ON)=90m?@VGS=-4.5V. RDS(ON)=120m?@VGS=-2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Surface

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM11M2

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,6A,RDS(ON)=25mΩ@VGS=4.5V. RDS(ON)=31mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

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CET/華瑞
20+
SO-8
120000
原裝正品 可含稅交易
 詢價(jià)
VBSEMI/臺(tái)灣微碧
23+
SOP8
50000
全新原裝正品現(xiàn)貨,支持訂貨
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CET/華瑞
23+
SOP8
3000
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
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VBsemi
21+
SOP8
10026
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
CET/華瑞
2022+
SOP-8
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
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VBsemi
23+
SOP8
10065
原裝正品,有掛有貨,假一賠十
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VBsemi
23+
SOP8
10000
原裝正品現(xiàn)貨
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CET/華瑞
23+
SO-8
360000
交期準(zhǔn)時(shí)服務(wù)周到
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VB
25+
SO-8
10049
原裝正品,假一罰十!
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TI
24+
DIP
9480
公司現(xiàn)貨庫(kù)存,支持實(shí)單
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更多CEM供應(yīng)商 更新時(shí)間2025-3-27 14:00:00

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