首頁 >CEM>規(guī)格書列表

零件編號(hào)下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

CEM2539B

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V,7.5A, FEATURES RDS(ON)=25mW@VGS=4.5V. -20V,-4A,RDS(ON)=100mW@VGS=-4.5V. RDS(ON)=150mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. RDS(O

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM26138

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,7.6A,RDS(ON)=22mΩ@VGS=10V. RDS(ON)=33mΩ@VGS=4.5V. ■20V,6A,RDS(ON)=27mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lea

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM26138

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,7.6A,RDS(ON)=22mW@VGS=10V. RDS(ON)=33mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. 20V,6A,RDS(ON)=27mW@VGS=4.5V. RDS(ON)=40mW@VGS=2.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM2939

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■20V,6.5A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=43mΩ@VGS=2.5V. ■-20V,-4.8A,RDS(ON)=55mΩ@VGS=-4.5V. RDS(ON)=90mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabi

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM2939

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 20V,6.5A,RDS(ON)=30mW@VGS=4.5V. RDS(ON)=43mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. -20V,-4.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=90mW@VGS=-2.5V. Lead-freeplating;R

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3032

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,18A,RDS(ON)=4.8mΩ@VGS=10V. RDS(ON)=6.8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3053

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-15A,RDS(ON)=7mΩ@VGS=-10V. RDS(ON)=15mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. ■ESDProtected:4000V

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3053A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-16.4A,RDS(ON)=5.8mW@VGS=-10V. RDS(ON)=9.1mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3060

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,14A,RDS(ON)=7.8m?@VGS=10V. RDS(ON)=11.5m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3060

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,14A,RDS(ON)=7.8mW@VGS=10V. RDS(ON)=11.5mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
CET/華瑞
20+
SO-8
120000
原裝正品 可含稅交易
 詢價(jià)
VBSEMI/臺(tái)灣微碧
23+
SOP8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
CET/華瑞
23+
SOP8
3000
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價(jià)
VBsemi
21+
SOP8
10026
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
CET/華瑞
2022+
SOP-8
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
VBsemi
23+
SOP8
10065
原裝正品,有掛有貨,假一賠十
 詢價(jià)
CET/華瑞
23+
SO-8
360000
交期準(zhǔn)時(shí)服務(wù)周到
 詢價(jià)
VB
25+
SO-8
10049
原裝正品,假一罰十!
 詢價(jià)
TI
24+
DIP
9480
公司現(xiàn)貨庫存,支持實(shí)單
 詢價(jià)
VBSEMI/臺(tái)灣微碧
24+
SOP8
60000
詢價(jià)
更多CEM供應(yīng)商 更新時(shí)間2025-4-1 14:00:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多