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CEM0215

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■150V,2A,RDS(ON)=440mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM0215

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,2A,RDS(ON)=440mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM0215SL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,1.8A,RDS(ON)=460mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=515mW@VGS=5V. RDS(ON)=530mW@VGS=3V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM0310

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,2.6A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM0310

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,2.6A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM0310SL

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,2.6A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=190mW@VGS=5V. RDS(ON)=220mW@VGS=3V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM0410

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,3.4A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM0410

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,3.4A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM0410SL

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,3.2A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=165mW@VGS=3V. RDS(ON)=130mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM0415

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■150V,4A,RDS(ON)=85mΩ@VGS=10V. RDS(ON)=95mΩ@VGS=6V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

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23+
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50000
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23+
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3000
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10026
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CET/華瑞
2022+
SOP-8
30000
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VBsemi
23+
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10065
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VBsemi
23+
SOP8
10000
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23+
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360000
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VB
25+
SO-8
10049
原裝正品,假一罰十!
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VB
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10049
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更多CEM供應(yīng)商 更新時(shí)間2025-3-20 14:00:00

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