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CEB3120

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●30V,40A,RDS(ON)=15mΩ@VGS=10V. RDS(ON)=22mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Leadfreeproductisacquired. ●TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB3120

N-Channel Enhancement Mode Field Effect Transistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,36A,RDS(ON)=15m?@VGS=10V. RDS(ON)=22m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,36A,RDS(ON)=15mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=22mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,10A,RDS(ON)=15m?@VGS=10V. RDS(ON)=22m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3120

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEP3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●30V,40A,RDS(ON)=15mΩ@VGS=10V. RDS(ON)=22mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Leadfreeproductisacquired. ●TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,36A,RDS(ON)=15m?@VGS=10V. RDS(ON)=22m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3120

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3120

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,36A,RDS(ON)=15mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=22mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號：

    CEB3120

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
SR
23+
T0-263
5000
原裝正品,假一罰十
 詢價
CET
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
CET
18+
TO-263
41200
原裝正品,現(xiàn)貨特價
 詢價
CET
20+
TO-263
368
樣品可出,原裝現(xiàn)貨
 詢價
CET
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
CET/華瑞
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CET/華瑞
2022+
TO-263
50000
原廠代理 終端免費提供樣品
 詢價
VBsemi
21+
TO263
10026
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
CET/華瑞
24+
NA/
3310
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
CET/華瑞
2022+
TO-263
30000
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
更多CEB3120供應(yīng)商 更新時間2025-4-17 15:36:00

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