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CEB4060AR

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ?60V,15A,RDS(ON)=85mΩ@VGS=10V. ?SuperhighdensecelldesignforextremelylowRDS(ON) ?Highpowerandcurrenthandlingcapability. ?TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB4060L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=90m?@VGS=10V. RDS(ON)=100m?@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,15A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=80m?@VGS=10V. RDS(ON)=95m?@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,16A,RDS(ON)=75mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=90mW@VGS=5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=85m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,17A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=75m?@VGS=10V. RDS(ON)=90m?@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,17A,RDS(ON)=75mW@VGS=10V. RDS(ON)=90mW@VGS=5.0V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CEB4060AR

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
CET
12+
TO-263
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
CET/華瑞
22+
SOT263
20000
保證原裝正品,假一陪十
 詢價(jià)
CET
23+24
TO-263
59630
主營原裝MOS,二三級(jí)管,肖特基,功率場效應(yīng)管
 詢價(jià)
CET
24+
5000
詢價(jià)
CET
24+
TO-263
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
CET
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
CET
24+
TO-263
90000
進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理
 詢價(jià)
CET
18+
TO-263
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
CET
24+
TO-263
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!?
 詢價(jià)
更多CEB4060AR供應(yīng)商 更新時(shí)間2025-3-26 17:25:00

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