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CEB6060

N-Channel Enhancement Mode Field Effect Transistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,50A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,52.4A,RDS(ON)=21mW@VGS=10V. RDS(ON)=25mW@VGS=5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6060LR

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●60V,60A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060N

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,42A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060N

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,42A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6060R

N-Channel Enhancement Mode Field Effect Transistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060L

N-Channel Enhancement Mode Field Effect Transistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6060R

N-Channel Enhancement Mode Field Effect Transistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6060L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,48A,RDS(ON)=24mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=29mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細參數(shù)

  • 型號：

    CEB6060

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
CET
24+
TO-263
1335
詢價
CET
24+
TO-263
5000
只做原裝公司現(xiàn)貨
 詢價
CET/華瑞
22+
TO-263
20000
保證原裝正品,假一陪十
 詢價
CET
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
CET
21+
TO-263
900
原裝現(xiàn)貨假一賠十
 詢價
CET/華瑞
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CET/華瑞
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CET/華瑞
23+
TO-263
13550
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
CET/華瑞
01+
TO-263
1335
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
CET/華瑞
22+
TO-263
100000
代理渠道/只做原裝/可含稅
 詢價
更多CEB6060供應(yīng)商 更新時間2025-3-28 16:30:00

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