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首頁(yè) >BF888>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
BF888	文件：508.07 Kbytes Page：5 Pages	High Performance Bipolar NPN RF Transistor	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
BF888H6327XTSA1	文件：100 bytes Page：1 Pages	包裝：托盤封裝/外殼：SC-82A，SOT-343 類別：分立半導(dǎo)體產(chǎn)品晶體管 - 雙極（BJT）- 射頻描述：MOSFET N-CH RF 12V 30MA SOT-343	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
BGY888	文件：55 Kbytes Page：12 Pages	CATVamplifiermodule DESCRIPTION Hybridhighdynamicrangeamplifiermoduleoperatingwithavoltagesupplyof24VinaSOT115Jpackage.Thehighgainmoduleconsistsoftwocascadedstagesbothincascodeconfiguration. FEATURES ?Excellentlinearity ?Extremelylownoise ?Highgain ?Excellentreturnlosspr	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
BGY888	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLF888	文件：173.97 Kbytes Page：17 Pages	UHFpowerLDMOStransistor	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
BLF888	文件：435.75 Kbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A500WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Thetransistorisoptimizedfordigitalapplicationsandcandeliver110WaverageDVB-TbroadbandoverthefullUHFbandfrom470MHzto860MHz.Theexcellentruggednessof	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLF888	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLF888A	文件：443.34 Kbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits ■Excellentruggedness(VSWR≥40:1througha	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
BLF888A	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLF888A	文件：1.53792 Mbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits ?Excellentruggedness(VSWR?40:1through	AmpleonAmpleon USA Inc. 安譜隆	Ampleon
BLF888A(S)	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLF888AS	文件：443.34 Kbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits ■Excellentruggedness(VSWR≥40:1througha	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
BLF888AS	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLF888AS	文件：1.53792 Mbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits ?Excellentruggedness(VSWR?40:1through	AmpleonAmpleon USA Inc. 安譜隆	Ampleon
BLF888B	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLF888B	文件：1.87329 Mbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A650WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits ?Excellentruggedness ?Optimumthermalbeh	AmpleonAmpleon USA Inc. 安譜隆	Ampleon
BLF888B(S)	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLF888BS	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
BLF888BS	文件：1.87329 Mbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A650WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits ?Excellentruggedness ?Optimumthermalbeh	AmpleonAmpleon USA Inc. 安譜隆	Ampleon
BLF888D	文件：1.07778 Mbytes Page：12 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcastDohertytransmitterapplications.The excellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitter applications. Featuresandbenefits ?Highefficiency ?Highpowergain ?Excellentruggedness(VSW	AmpleonAmpleon USA Inc. 安譜隆	Ampleon

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詳細(xì)參數(shù)

型號(hào)：
BF888
制造商：
Infineon Technologies AG
功能描述：
Trans GP BJT NPN 4V 0.03A 4-Pin(3+Tab) SOT-343 T/R

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	BF888	INFINEON/英飛凌	20+	SOT343	120000	原裝正品可含稅交易	詢價(jià)
深圳市科芯源微電子有限公司	BF888	INFINEON/英飛凌	23+	SOT343	100586	全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!	詢價(jià)
深圳市中福國(guó)際管理有限公司	BF888	INFINEON/英飛凌	23+	SOT343	360000	專業(yè)供應(yīng)MOS/LDO/晶體管/有大量?jī)r(jià)格低	詢價(jià)
深圳市拓億芯電子有限公司	BF888	INFINEON/英飛凌	23+	SOT343	15000	全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	BF888	INFINEON/英飛凌	23+	SOT343	395892	原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	BF888	INFINEON	23+	SOT-343	8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	BF888	INFINEON	23+	SOT-343	8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	BF888	INFINEON	23+	SOT-343	7000		詢價(jià)
深圳市達(dá)恩科技有限公司	BF888H6327	Infineon	18+	NA	3076	進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190	詢價(jià)
深圳市正納電子有限公司	BF888H6327	infineon technologies	23+	NA	358700	原裝現(xiàn)貨庫(kù)存特價(jià)/長(zhǎng)期供應(yīng)元器件代理經(jīng)銷	詢價(jià)

更多BF888供應(yīng)商更新時(shí)間2025-1-3 14:00:00

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