BLF888分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications.

Features and benefits

■ 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain

??????? current IDq = 1.3 A:

◆ Peak envelope power load power = 500 W

◆ Power gain = 19 dB

◆ Drain efficiency = 46

◆ Third order intermodulation distortion = ?32 dBc

■ DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.3 A:

◆ Average output power = 110 W

◆ Power gain = 19 dB

◆ Drain efficiency = 31

◆ Shoulder distance = ?31 dBc (4.3 MHz from center frequency)

■ Integrated ESD protection

■ Advanced flange material for optimum thermal behavior and reliability

■ Excellent ruggedness

■ High power gain

■ High efficiency

■ Designed for broadband operation (470 MHz to 860 MHz)

■ Excellent reliability

■ Internal input matching for high gain and optimum broadband operation

■ Easy power control

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

■ Communication transmitter applications in the UHF band

■ Industrial applications in the UHF band