首頁(yè) >AIKW30N60CT>規(guī)格書(shū)列表

零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

AIKW30N60CT

Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIKW30N60CTXKSA1

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IC DISCRETE 600V TO247-3

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AR30N60

ACTIVE/SYNCHRONOUSRECTIFIER

DIODES

Diodes Incorporated

BIDW30N60T

BIDW30N60TInsulatedGateBipolarTransistor(IGBT)

GeneralInformation TheBourns?ModelBIDW30N60TIGBTdevicecombinestechnologyfromaMOSgate andabipolartransistorforanoptimumcomponentforhighvoltageandhighcurrent applications.ThisdeviceusesTrench-GateField-Stoptechnologyprovidinggreater controlofdynamiccharacteris

BournsBourns Electronic Solutions

伯恩斯伯恩斯（邦士）

DAM30N60C

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM30N60F

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM30N60S

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

FGA30N60LSD

MOSFETsandbipolartransistors

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGA30N60LSDTU

MOSFETsandbipolartransistors

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N60LSD

Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N60LSDTU

Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGW30N60VD

DiscreteIGBT(High-SpeedVseries)600V/30A

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

G30N60

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

G30N60

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

G30N60

600V,SMPSSeriesN-ChannelIGBTwith

TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

G30N60

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolar

Intersil

Intersil Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon(英飛凌)
23+
TO-247
1076
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價(jià)
Infineon(英飛凌)
23+
N/A
12000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
INFINEON/英飛凌
21+23+
TO-247
10500
16年電子元件現(xiàn)貨供應(yīng)商 終端BOM表可配單提供樣品
 詢價(jià)
英飛凌
新批次
N/A
1500
詢價(jià)
INFINEON
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
Infineon(英飛凌)
2112+
PG-TO247-3-41
115000
240個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
 詢價(jià)
Infineon/英飛凌
21+
PG-TO247-3-41
8800
公司只作原裝正品
 詢價(jià)
INFINEON/英飛凌
22+
13800
原裝正品,品質(zhì)保證,值得你信賴
 詢價(jià)
Infineon/英飛凌
21+
PG-TO247-3-41
6000
原裝現(xiàn)貨正品
 詢價(jià)
Infineon(英飛凌)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價(jià)
更多AIKW30N60CT供應(yīng)商 更新時(shí)間2024-11-16 14:08:00

相關(guān)規(guī)格書(shū)

更多

相關(guān)庫(kù)存

更多