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首頁 >FGA30N60LSD>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FGA30N60LSD	文件：774.14 Kbytes Page：9 Pages	MOSFETs and bipolar transistors	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGA30N60LSDTU	文件：774.14 Kbytes Page：9 Pages	MOSFETs and bipolar transistors	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGA30N60LSDTU	文件：100 bytes Page：1 Pages	包裝：管件封裝/外殼：TO-3P-3，SC-65-3 類別：分立半導(dǎo)體產(chǎn)品晶體管 - UGBT、MOSFET - 單描述：IGBT TRENCH/FS 600V 60A TO3P	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
FGH30N60LSD	文件：714.63 Kbytes Page：9 Pages	Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGH30N60LSDTU	文件：714.63 Kbytes Page：9 Pages	Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FGW30N60VD	文件：656.97 Kbytes Page：8 Pages	DiscreteIGBT(High-SpeedVseries)600V/30A	FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社	Fuji
G30N60	文件：178.25 Kbytes Page：8 Pages	600V,SMPSSeriesN-ChannelIGBT TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
G30N60	文件：221.78 Kbytes Page：8 Pages	60A,600V,UFSSeriesN-ChannelIGBT TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
G30N60	文件：116.91 Kbytes Page：7 Pages	63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	Intersil Intersil Corporation	Intersil
G30N60	文件：144.62 Kbytes Page：8 Pages	63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
G30N60	文件：105.22 Kbytes Page：7 Pages	60A,600V,UFSSeriesN-ChannelIGBT TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	Intersil Intersil Corporation	Intersil
G30N60	文件：191.86 Kbytes Page：9 Pages	600V,SMPSSeriesN-ChannelIGBTwith TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
G30N60	文件：92.78 Kbytes Page：8 Pages	600V,SMPSSeriesN-ChannelIGBT TheHGTG30N60A4isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	Intersil Intersil Corporation	Intersil
G30N60	文件：100.45 Kbytes Page：9 Pages	600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolar	Intersil Intersil Corporation	Intersil
G30N60	文件：367.38 Kbytes Page：12 Pages	FastIGBTinNPT-technology	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
G30N60HS	文件：389.58 Kbytes Page：12 Pages	HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
HIA30N60BP	文件：663.24 Kbytes Page：7 Pages	600VPTIGBT	SEMIHOW SemiHow Co.,Ltd.	SEMIHOW
HIH30N60BP	文件：643.46 Kbytes Page：7 Pages	600VPTIGBT	SEMIHOW SemiHow Co.,Ltd.	SEMIHOW
ICE30N60W	文件：958.35 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	MICROSS Micross Components	MICROSS
ICE30N60W	文件：589.91 Kbytes Page：8 Pages	N-ChannelEnhancementModeMOSFET	ICEMOS Icemos Technology	ICEMOS

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詳細(xì)參數(shù)

型號(hào)：
FGA30N60LSD
制造商：
FAIRCHILD
制造商全稱：
Fairchild Semiconductor
功能描述：
MOSFETs and bipolar transistors

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市永貝爾科技有限公司	FGA30N60LSD	FAIRCHILD	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	FGA30N60LSD	FAIRCHILD	1816+	TO-3P	6523	科恒偉業(yè)!只做原裝正品,假一賠十!	詢價(jià)
深圳誠思涵科技有限公司	FGA30N60LSD	FAIRCHILD	18+	TO3P	85600	保證進(jìn)口原裝可開17%增值稅發(fā)票	詢價(jià)
深圳市賽芯源科技有限公司	FGA30N60LSD	FAIRCHILD	18+	TO-3PN	41200	原裝正品,現(xiàn)貨特價(jià)	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	FGA30N60LSD	FSC	20+	TO-3PN	36900	原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票	詢價(jià)
深圳市國宇半導(dǎo)體科技有限公司	FGA30N60LSD	FAIRCHILD/仙童	23+	TO-3PN	5380	公司只做原裝正品	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	FGA30N60LSD	FAIRCHILD/仙童	23+	TO-247	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	FGA30N60LSD	FSC	23+	TO247	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市富誠威科技有限公司	FGA30N60LSD	FAIRCHILD/仙童	22+	TO-3P	3255	強(qiáng)勢(shì)庫存!原裝現(xiàn)貨!	詢價(jià)
深圳廊盛科技有限公司	FGA30N60LSD	FAIRCHILD/仙童	2022	TO-247	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價(jià)

更多FGA30N60LSD供應(yīng)商更新時(shí)間2024-12-20 18:01:00

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