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2SJ601

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Lowon-stateresistance: RDS(on)1=31m?MAX.(VGS=–10V,ID=–18A) RDS(on)2=46m?MAX.(VGS=–4.0V,ID=–18A) ?Lowinputcapacitance:

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ601

MOS Field Effect Transistor

MOSFieldEffectTransistor Features Lowon-resistance RDS(on)1=31mMAX.(VGS=-10V,ID=-18A) RDS(on)2=46mMAX.(VGS=-4.0V,ID=-18A) LowCiss:Ciss=3300pFTYP. Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ601

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES Lowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=–10V,ID=–18A) RDS(on)2=46mΩMAX.(VGS=–4.0V,ID=–18A) Lowinput

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ601

Marking：J601；Package：TO-252-3L；P-Channel 60-V (D-S) MOSFET

FEATURES RDS(ON)14mQ@VGs=-10V(Typ) RDs(ON)16mQ@VGs=-4.5V(Typ) SuperhighdensitycelldesignforextremelylowRDS(ON) Exceptionalon-resistanceandmaximumDCcurrent capability

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

2SJ601

P-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

2SJ601-Z

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Lowon-stateresistance: RDS(on)1=31m?MAX.(VGS=–10V,ID=–18A) RDS(on)2=46m?MAX.(VGS=–4.0V,ID=–18A) ?Lowinputcapacitance:

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ601-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES Lowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=–10V,ID=–18A) RDS(on)2=46mΩMAX.(VGS=–4.0V,ID=–18A) Lowinput

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ601-Z

Isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=31mΩ(Max)@VGS=-10V DESCRIPTION ·Solenoid,motorandlampdriver

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SJ601_15

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ601-Z-E1-AZ

P-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

詳細參數(shù)

  • 型號：

    2SJ601

  • 制造商：

    Renesas Electronics Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
24+
TO-252
505348
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
NEC
24+
TO-251
20000
詢價
NEC
23+
TO-252
9526
詢價
NEC
12+
TO-251(IPAK)
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
NEC
23+
TO-252
20000
原裝正品,假一罰十
 詢價
NEC
24+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
NEC
23+
TO-251
12237
全新原裝
 詢價
KEXIN
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
NEC
18+
TO-252
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
NEC
21+
TO-252
12588
原裝正品,自己庫存 假一罰十
 詢價
更多2SJ601供應(yīng)商 更新時間2025-3-19 10:11:00

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