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2N6036

MIDIUM POWER DAR;OMGTONS

DESCRIPTION The2N6037,2N6038and2N6039aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTo-126plasticpackage. ThecomplementaryPNPtypesarethe2N6034,2N6035and2N6036respectively.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

2N6036

Plastic Darlington Complementary Silicon Power Transistors

PlasticDarlingtoncomplementarysiliconpowertransistorsaredesignedforgeneralpurposeamplifierandlow?speedswitchingapplications. Features ?ESDRatings:MachineModel,C;>400V HumanBodyModel,3B;>8000V ?EpoxyMeetsUL94V?0@0.125in ?Pb?FreePa

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N6036

Silicon PNP Power Transistors

DESCRIPTION ?WithTO-126package ?Complementtotype2N6037/6038/6039 ?DARLINGTON ?HighDCcurrentgain APPLICATIONS ?Designedforgeneral-purposeamplifierandlow-speedswitchingapplications

SAVANTIC

Savantic, Inc.

2N6036

Silicon PNP Power Transistors

DESCRIPTION ?WithTO-126package ?Complementtotype2N6037/6038/6039 ?DARLINGTON ?HighDCcurrentgain APPLICATIONS ?Designedforgeneral-purposeamplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2N6036

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6034,2N6037seriesdevicesarecomplementarysiliconDarlingtonpowertransistors,manufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierandswitchingapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

2N6036

SILICON DARLINGTON POWER TRANSISTOR

DESCRIPTION: 2N6034,2N6037seriesdevicesarecomplementarysiliconDarlingtonpowertransistors,manufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierandswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2N6036

COMPLEMENTARY SILICON DARLINGTON TRANSISTORS

DESCRIPTION: 2N6034,2N6037seriesdevicesarecomplementarysiliconDarlingtonpowertransistors,manufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierandswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2N6036

SILICON POWER DARLINGTON TRANSISTORS

SILICONPOWERDARLINGTONTRANSISTORS DesignedforGeneral-PurposeAmplifier&LowSpeedSwitchingApplications.

CDIL

Continental Device India Limited

2N6036

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The2N6037,2N6038and2N6039aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTo-126plasticpackage. ThecomplementaryPNPtypesarethe2N6034,2N6035and2N6036respectively.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

2N6036

PNP Darlington Power Transistor

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?Thisdeviceisdesignedforgeneralpurposeamplifierandlow-speedswitchingapplications. ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0fla

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N6036

Plastic Darlington Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N6036

Silicon PNP Power Transistors

SAVANTIC

Savantic, Inc.

2N6036

PNP Darlington Power Transistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

2N6036

Complementary power Darlington transistors

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

2N6036

Plastic Darlington Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N6036

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

2N6036

包裝:散裝 封裝/外殼:TO-225AA,TO-126-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS PNP DARL 80V 4A TO126

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N6036

包裝:剪切帶(CT)帶盒(TB) 封裝/外殼:TO-225AA,TO-126-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS PNP DARL 80V 4A SOT32

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

2N6036PNP

SILICON POWER DARLINGTON TRANSISTORS

SILICONPOWERDARLINGTONTRANSISTORS DesignedforGeneral-PurposeAmplifier&LowSpeedSwitchingApplications.

CDIL

Continental Device India Limited

2N6036_00

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

晶體管資料

  • 型號(hào):

    2N6036

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-P+Darl+Di

  • 性質(zhì):

    低頻或音頻放大 (LF)_開(kāi)關(guān)管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    80V

  • 最大電流允許值:

    4A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    BD262A,BD680,BD780,

  • 最大耗散功率:

    40W

  • 放大倍數(shù):

    β>750

  • 圖片代號(hào):

    B-21

  • vtest:

    80

  • htest:

    999900

  • atest:

    4

  • wtest:

    40

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    2N6036

  • 制造商:

    onsemi

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)

  • 包裝:

    散裝

  • 晶體管類型:

    PNP - 達(dá)林頓

  • 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):

    3V @ 40mA,4A

  • 電流 - 集電極截止(最大值):

    100μA

  • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):

    750 @ 2A,3V

  • 工作溫度:

    -65°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-225AA,TO-126-3

  • 供應(yīng)商器件封裝:

    TO-126

  • 描述:

    TRANS PNP DARL 80V 4A TO126

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
2024
TO-126
70230
16余年資質(zhì) 絕對(duì)原盒原盤(pán)代理渠道 更多數(shù)量
詢價(jià)
MOT
24+
2390
詢價(jià)
STMicro.
23+
SOT-32
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
STM
2339+
N/A
4326
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
詢價(jià)
ON
24+
TO-126
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價(jià)
ON
1738+
TO-126
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
詢價(jià)
ISC
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
NXP
23+
SOT23
30000
全新原裝假一賠十
詢價(jià)
ON
23+
TO-126
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
STMicroelectronics
2022+
1919
全新原裝 貨期兩周
詢價(jià)
更多2N6036供應(yīng)商 更新時(shí)間2024-12-25 16:40:00