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RM20N60LDV

Marking：20N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=20A RDS(ON)

RECTRON

Rectron Semiconductor

EC7320N60AR

Marking：20N60；Package：TO-220F-3L；N-Channel Power MOSFET

E-CMOSE-CMOS Corporation

飛虹高科飛虹高科股份有限公司

RM20N60LD

Marking：20N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

RECTRON

Rectron Semiconductor

HGTG20N60A4D

Marking：20N60A4D；Package：TO-247；SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

TheHGTG20N60A4DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThisdevicehasthehighinputimpedanceofaMOSFET andthelowon?stateconductionlossofabipolartransistor.Themuch loweron?statevoltagedropvariesonlymode

ONSEMION Semiconductor

安森美半導體安森美半導體公司

SPB20N60C3

Marking：20N60C3；Package：TO-263-3；Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60C3

Marking：20N60C3；Package：TO-220-3-1；Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

STB20N60M2-EP

Marking：20N60M2EP；Package：D2PAK；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh? M2 EP Power MOSFET in a D2PAK package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?Verylowturn-offswitchinglosses ?100avalanchetested ?Zener-protected Applications ?Switchingapplications ?Tailoredforveryhighfrequencyconverters(f>150kHz) Description Thisdevicei

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STI20N60M2-EP

Marking：20N60M2EP；Package：I2PAK；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh? M2 EP Power MOSFET in an I2PAK package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?Verylowturn-offswitchinglosses ?100avalanchetested ?Zener-protected Applications ?Switchingapplications ?Tailoredforveryhighfrequencyconverters(f>150kHz) Description Thisdevicei

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STW20N60M2-EP

Marking：20N60M2EP；Package：TO-247；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh? M2 EP Power MOSFET in a TO-247 package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?Verylowturn-offswitchinglosses ?100avalanchetested ?Zener-protected Applications ?Switchingapplications ?Tailoredforveryhighfrequencyconverters(f>150kHz) Description Thisdevicei

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IPD20N03L

Marking：20N60A4；Package：TO-263AB；600V, SMPS Series N-Channel IGBTs

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數(shù)

  • 型號：

    20N60

  • 制造商：

    UTC-IC

  • 制造商全稱：

    UTC-IC

  • 功能描述：

    20A, 600V N-CHANNEL POWER MOSFET

供應商型號品牌批號封裝庫存備注價格
25+
6500
十七年專營原裝現(xiàn)貨一手貨源,樣品免費送
 詢價
FSC
23+
原廠封裝
9526
詢價
FIRST進口
1215+
TO-220F
150000
全新原裝,絕對正品,公司大量現(xiàn)貨供應.
 詢價
INFINEON
23+
TO220
9980
價格優(yōu)勢、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來電查詢
 詢價
VBsemi
24+
TO252
5000
只做原裝公司現(xiàn)貨
 詢價
AOS
2020+
TO-220F
5000
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
TO-251
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
REASUNOS
1948+
TO-3P
18562
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
24+
TO-220220F3P
38520
一級代理/放心購買
 詢價
英飛凌
24+
TO-220
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
更多20N60供應商 更新時間2025-3-24 17:16:00

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