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HGTG20N60A4D中文資料安森美半導體數(shù)據(jù)手冊PDF規(guī)格書
HGTG20N60A4D規(guī)格書詳情
The HGTG20N60A4D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a MOSFET
and the low on?state conduction loss of a bipolar transistor. The much
lower on?state voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49339. The diode
used in anti?parallel is the development type TA49372.
This IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses are
essential. This device has been optimized for high frequency switch
mode power supplies. Formerly Developmental Type TA49341.
Features
? >100 kHz Operation 390 V, 20 A
? 200 kHz Operation 390 V, 12 A
? 600 V Switching SOA Capability
? Typical Fall Time 55 ns at TJ = 125°C
? Low Conduction Loss
? Temperature Compensating Saber? Model
? This is a Pb?Free Device
產(chǎn)品屬性
- 型號：
HGTG20N60A4D
- 功能描述：
IGBT 晶體管 600V
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集電極—發(fā)射極最大電壓
- VCEO：
650 V
- 集電極—射極飽和電壓：
2.3 V
- 柵極/發(fā)射極最大電壓：
20 V 在25
- C的連續(xù)集電極電流：
150 A
- 柵極—射極漏泄電流：
400 nA
- 功率耗散：
187 W
- 封裝/箱體：
TO-247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHIL |
24+ |
TO-247 |
8866 |
詢價 | |||
原裝 |
1922+ |
TO-3P |
9200 |
公司原裝現(xiàn)貨假一罰十特價歡迎來電咨詢 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-247 |
7530 |
公司只做原裝正品 |
詢價 | ||
ON |
24+ |
TO-247 |
9000 |
只做原裝 假一賠十 |
詢價 | ||
FairchildSemiconductor |
18+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
FSC |
2020+ |
TO-247 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
仙童 |
20+ |
TO-247 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
onsemi(安森美) |
23+ |
TO-247-3 |
10000 |
只做原裝 假一賠萬 |
詢價 | ||
ON/安森美 |
22+ |
SMD |
9000 |
原裝正品 |
詢價 | ||
ON/安森美 |
21+ |
TO-247-3 |
8080 |
公司只做原裝,誠信經(jīng)營 |
詢價 |
