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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
SPP20N60C3	文件：339.04 Kbytes Page：2 Pages	N-Channel MOSFET Transistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perfor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
SPP20N60C3	文件：314.6 Kbytes Page：14 Pages	Cool MOS Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
SPP20N60C3	文件：1.83839 Mbytes Page：15 Pages	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
SPP20N60C3_09	文件：1.83839 Mbytes Page：15 Pages	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
20N60C3	文件：314.6 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
20N60C3	文件：81.67 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately	Intersil Intersil Corporation	Intersil
G20N60C3	文件：144.01 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTG20N60C3	文件：153.1 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTG20N60C3	文件：81.67 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately	Intersil Intersil Corporation	Intersil
HGTG20N60C3	文件：144.01 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTG20N60C3D	文件：82.71 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate	Intersil Intersil Corporation	Intersil
HGTG20N60C3D	文件：123.08 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTG20N60C3R	文件：107.72 Kbytes Page：6 Pages	40A,600V,RuggedUFSSeriesN-ChannelIGBTs	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTP20N60C3	文件：144.01 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTP20N60C3	文件：153.1 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HGTP20N60C3	文件：81.67 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately	Intersil Intersil Corporation	Intersil
HGTP20N60C3R	文件：107.72 Kbytes Page：6 Pages	40A,600V,RuggedUFSSeriesN-ChannelIGBTs	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
ISPP20N60C3	文件：339.04 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perfor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
ISPW20N60C3	文件：335.47 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
SPA20N60C3	文件：313.83 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?FEATURES ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC

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詳細(xì)參數(shù)

型號(hào)：
SPP20N60C3
功能描述：
MOSFET COOL MOS N-CH 650V
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市賽爾通科技有限公司	SPP20N60C3	INFINEON	23+		5000		詢價(jià)
深圳市粵駿騰電子科技有限公司	SPP20N60C3	INFINEON	24+	TO-220	15000	原裝正品現(xiàn)貨	詢價(jià)
深圳市正邁科技有限公司	SPP20N60C3	INFINEON/英飛凌	23+	TO220	16690	ADI原裝現(xiàn)貨歡迎查詢庫(kù)存變動(dòng)長(zhǎng)期可供應(yīng)訂貨樣品現(xiàn)貨	詢價(jià)
深圳市勤思達(dá)科技有限公司	SPP20N60C3	IR	2020+	TO-220	22000	全新原裝正品現(xiàn)貨庫(kù)存價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市中聯(lián)芯電子有限公司	SPP20N60C3	INFINEON/英飛凌	24+	TO-220	17560	原裝現(xiàn)貨假一賠百,熱賣現(xiàn)貨庫(kù)存	詢價(jià)
深圳市昌和盛利電子有限公司	SPP20N60C3	INFINEON原裝正品	23+	TO-220	12500	專注原裝正品現(xiàn)貨特價(jià)中量大可定	詢價(jià)
上海鑫科潤(rùn)電子科技有限公司	SPP20N60C3	INFINEON	14+	TO-220	9860	大量原裝進(jìn)口現(xiàn)貨,一手貨源,一站式服務(wù),可開(kāi)17%增	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	SPP20N60C3	INFINEON	23+	TO-220	8000	原裝正品,假一罰十	詢價(jià)
深圳市華來(lái)深電子有限公司	SPP20N60C3	INFINEON	23+	TO-220	1896	公司優(yōu)勢(shì)庫(kù)存熱賣全新原裝!歡迎來(lái)電	詢價(jià)
深圳市達(dá)恩科技有限公司	SPP20N60C3	Infineon	18+	TO-220	2841	進(jìn)口原裝優(yōu)勢(shì)供應(yīng)QQ3171516190	詢價(jià)

更多SPP20N60C3供應(yīng)商更新時(shí)間2025-1-11 17:19:00

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