首頁(yè) >VT10200C-E3>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
VT10200C-E3 | Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
VT10200C-E3 | Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106 (forTO-220AB,ITO-220ABandTO-262AApacka | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106 (forTO-220AB,ITO-220ABandTO-262AApacka | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-220-3 類(lèi)別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述:DIODE ARRAY SCHOTTKY 200V TO220 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | ||
TrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106 (forTO-220AB,ITO-220ABandTO-262AApacka | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
TrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
TrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
TrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
TrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
TrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106 (forTO-220AB,ITO-220ABandTO-262AApacka | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
TrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106 (forTO-220AB,ITO-220ABandTO-262AApacka | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
TrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AB,ITO-220ABandTO-262AApackage | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
TrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號(hào):
VT10200C-E3
- 功能描述:
DIODE SCHOTTKY 200V 10A TO220AB
- RoHS:
是
- 類(lèi)別:
分離式半導(dǎo)體產(chǎn)品 >> 二極管,整流器 - 陣列
- 系列:
TMBS®
- 其它有關(guān)文件:
STTH10LCD06C View All Specifications
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
- 電壓 - 在 If
- 時(shí)為正向(Vf)(最大):
2V @ 5A 電流 - 在 Vr
- 時(shí)反向漏電:
1µA @ 600V 電流 -
- 平均整流(Io)(每個(gè)二極管):
5A 電壓
- -(Vr)(最大):
600V
- 反向恢復(fù)時(shí)間(trr):
50ns
- 二極管類(lèi)型:
標(biāo)準(zhǔn)
- 速度:
快速恢復(fù) = 200mA(Io)
- 二極管配置:
1 對(duì)共陰極
- 安裝類(lèi)型:
表面貼裝
- 封裝/外殼:
TO-263-3,D²Pak(2 引線(xiàn)+接片),TO-263AB
- 供應(yīng)商設(shè)備封裝:
D2PAK
- 包裝:
帶卷(TR)
- 產(chǎn)品目錄頁(yè)面:
1553(CN2011-ZH PDF)
- 其它名稱(chēng):
497-10107-2
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
VIS |
23+ |
TO-220AB |
10000 |
公司只做原裝正品 |
詢(xún)價(jià) | ||
VIS |
22+ |
TO-220AB |
6000 |
十年配單,只做原裝 |
詢(xún)價(jià) | ||
VIS |
23+ |
TO-220AB |
6000 |
原裝正品,支持實(shí)單 |
詢(xún)價(jià) | ||
TO220 |
90000 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢(xún)價(jià) | ||||
VIS |
22+ |
TO-220AB |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單 |
詢(xún)價(jià) | ||
VIS |
24+ |
TO-TO-220AB |
12300 |
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢(xún)價(jià) | ||
N/A |
500 |
詢(xún)價(jià) | |||||
VISHAY |
17+ |
TO220-3 |
6200 |
詢(xún)價(jià) | |||
VISHAY |
23+ |
TO-220 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)! |
詢(xún)價(jià) | ||
VISHAY原裝 |
22+23+ |
TO-220 |
22831 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
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相關(guān)庫(kù)存
更多- VT10200C-E3-4W
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- VT16245BDGG