零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
VT1080C | Dual Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC ?Halogen-freea | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
VT1080C | Dual Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
Dual Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220AB,an | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC ?Halogen-freea | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC ?Halogen-freea | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Dual Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Dual Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
包裝:管件 封裝/外殼:TO-220-3 類別:分立半導體產品 二極管 - 整流器 - 陣列 描述:DIODE ARRAY SCHOT 80V 5A TO220AB | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | ||
包裝:管件 封裝/外殼:TO-220-3 類別:分立半導體產品 二極管 - 整流器 - 陣列 描述:DIODE ARRAY SCHOT 80V 5A TO220AB | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | ||
包裝:卷帶(TR) 封裝/外殼:TO-220-3 類別:分立半導體產品 二極管 - 整流器 - 陣列 描述:DIODE ARRAY SCHOT 80V 5A TO220AB | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
詳細參數
- 型號:
VT1080C
- 制造商:
VISHAY
- 制造商全稱:
Vishay Siliconix
- 功能描述:
Dual Trench MOS Barrier Schottky Rectifier
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
VISHAY |
1809+ |
TO-220 |
3675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
VIS |
23+ |
TO-220AB |
10000 |
公司只做原裝正品 |
詢價 | ||
Vishay Semiconductor Diodes Di |
22+ |
TO220AB |
9000 |
原廠渠道,現貨配單 |
詢價 | ||
VISHAY/威世 |
23+ |
11200 |
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | |||
VIS |
23+ |
TO-220AB |
6000 |
原裝正品,支持實單 |
詢價 | ||
TO220 |
90000 |
集團化配單-有更多數量-免費送樣-原包裝正品現貨-正規(guī) |
詢價 | ||||
Vishay |
2023+環(huán)?,F貨 |
TO-220AB |
5050 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務 |
詢價 | ||
VIS |
22+ |
TO-220AB |
25000 |
只做原裝進口現貨,專注配單 |
詢價 | ||
Vishay Semiconductor Diodes Di |
23+ |
TO220AB |
8000 |
只做原裝現貨 |
詢價 | ||
Vishay General Semiconductor - |
24+ |
TO-220-3 |
9350 |
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證 |
詢價 |
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