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VNS1NV04DPTR-E

OMNIFET II fully autoprotected Power MOSFET

Description TheVNS1NV04DP-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPower?M0-3technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VNS1NV04DPTR-E

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 類別:集成電路(IC) 配電開關(guān),負(fù)載驅(qū)動器 描述:IC PWR DRIVER N-CHANNEL 1:1 8SO

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VND1NV04

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VND1NV04

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VND1NV04-E

forcarbodyapplications

Description TheL5958includes6linearvoltageregulatorsanda2Apowerswitch,workingdownto4.5Vbatterylevel.Allthevoltageregulatorscanbeswitchedoffthroughthethreeenablepins. Features ■L5958sixoutputs: –8.5V@200mA –5.0V@300mA –3.3V@250mA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VND1NV04-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VND1NV04TR

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VNN1NV04

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VNN1NV04

fullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VNN1NV04

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VNN1NV04P-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VNN1NV04PTR-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VNN1NV04TR

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VNN1NV04TR-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VNS1NV04

fullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VNS1NV04

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VNS1NV04

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VNS1NV04D

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VNS1NV04D

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

VNS1NV04D-E

??MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團

產(chǎn)品屬性

  • 產(chǎn)品編號:

    VNS1NV04DPTR-E

  • 制造商:

    STMicroelectronics

  • 類別:

    集成電路(IC) > 配電開關(guān),負(fù)載驅(qū)動器

  • 系列:

    OMNIFET II?, VIPower?

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • 開關(guān)類型:

    通用

  • 輸出數(shù):

    2

  • 比率 - 輸入:

    1:1

  • 輸出配置:

    低端

  • 輸出類型:

    N 通道

  • 接口:

    開/關(guān)

  • 電壓 - 負(fù)載:

    36V(最大)

  • 電壓 - 供電 (Vcc/Vdd):

    不需要

  • 電流 - 輸出(最大值):

    1.7A

  • 導(dǎo)通電阻(典型值):

    250 毫歐(最大)

  • 輸入類型:

    非反相

  • 故障保護:

    限流(固定),超溫,過壓

  • 工作溫度:

    -40°C ~ 150°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 供應(yīng)商器件封裝:

    8-SOIC

  • 封裝/外殼:

    8-SOIC(0.154",3.90mm 寬)

  • 描述:

    IC PWR DRIVER N-CHANNEL 1

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
24+
SOP8
8950
BOM配單專家,發(fā)貨快,價格低
詢價
ST
22+
SOP-8
20000
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
ST
21+
SOIC-8
20000
全新原裝,假一賠十!
詢價
ST
21+
SOP-8
5800
原裝正品現(xiàn)貨假一罰十
詢價
ST/意法
21+
SOP8
50000
原裝現(xiàn)貨/假一賠十/支持第三方檢驗
詢價
ST
23+
SOP-8
37500
一級分銷商!
詢價
STM
23+
SO-8
7500
詢價
ST
23+
SOP
20000
原裝進口ICMCUSOCMOS等知名國內(nèi)外品牌只做原裝全
詢價
STM
2022
SOP8
7510
原廠原裝正品,價格超越代理
詢價
ST
24+
N/P
16500
代理授權(quán)直銷,原裝現(xiàn)貨,假一罰十,長期穩(wěn)定供應(yīng)
詢價
更多VNS1NV04DPTR-E供應(yīng)商 更新時間2024-10-23 9:24:00