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UPA2762UGR

MOS FIELD EFFECT TRANSISTOR

Description TheμPA2762UGRisN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofanotebookcomputer. Features ?Lowon-stateresistance ?RDS(on)1=13.5mΩMAX.(VGS=10V,ID=12A) ?RDS(on)2=22mΩMAX.(VGS=4.5V,ID=10A) ?LowCiss:Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2762UGR-E1-AT

MOS FIELD EFFECT TRANSISTOR

Description TheμPA2762UGRisN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofanotebookcomputer. Features ?Lowon-stateresistance ?RDS(on)1=13.5mΩMAX.(VGS=10V,ID=12A) ?RDS(on)2=22mΩMAX.(VGS=4.5V,ID=10A) ?LowCiss:Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA2762UGR-E2-AT

MOS FIELD EFFECT TRANSISTOR

Description TheμPA2762UGRisN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofanotebookcomputer. Features ?Lowon-stateresistance ?RDS(on)1=13.5mΩMAX.(VGS=10V,ID=12A) ?RDS(on)2=22mΩMAX.(VGS=4.5V,ID=10A) ?LowCiss:Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762T

3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheμPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=3

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2762T

3V,WIDEBANDMEDIUMPOWERSIMMICAMPLIFIER

DESCRIPTION TheUPC2762TandUPC2763TareSiliconMonolithicintegratedcircuitswhicharemanufacturedusingtheNESATIIIprocess.TheNESATIIIprocessproducestransistorswithfTapproaching20GHz.Theseamplifiersweredesignedfor900MHzand1.9GHzreceiversincellular,cordlessteleph

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2762T

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz ?Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762T

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=30mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz ?Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762T

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz ?Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762TB

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=30mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz ?Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762TB

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz ?Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762TB

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz ?Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC2762TB

3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2762TB

3V,SUPERMINIMOLDMEDIUMPOWERSIMMICAMPLIFIER

CEL

California Eastern Labs

UPC2762TB

3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheμPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=3

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC2762TB

3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheμPC2762TB,μPC2763TBandμPC2771TBaresiliconmonolithicintegratedcircuitsdesignedasamplifierformobilecommunications.TheseICsoperateat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. TheseICismanufacturedusingNEC’s20GHzfTN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號:

    UPA2762UGR

  • 制造商:

    RENESAS

  • 制造商全稱:

    Renesas Technology Corp

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
1950+
SOP-8
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
RENESAS
20+
SOP-8
63258
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
R
21+
SOP-8
6000
絕對原裝現(xiàn)貨
詢價
ST/意法
23+
TO-252
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢價
RENESAS/瑞薩
SOP-8
90000
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
RENESAS/瑞薩
23+
NA/
3350
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
詢價
RENESAS/瑞薩
22+
SOP-8
25000
只有原裝原裝,支持BOM配單
詢價
VBSEMI
23+
SOP-8
17585
只做原裝 歡迎咨詢
詢價
RENESAS
2310+
SOP-8
34960
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨
詢價
RENESAS
21+
SOP
12588
原裝正品,自己庫存 假一罰十
詢價
更多UPA2762UGR供應(yīng)商 更新時間2025-1-4 17:48:00