首頁 >UPA2762UGR>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
UPA2762UGR | MOS FIELD EFFECT TRANSISTOR Description TheμPA2762UGRisN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofanotebookcomputer. Features ?Lowon-stateresistance ?RDS(on)1=13.5mΩMAX.(VGS=10V,ID=12A) ?RDS(on)2=22mΩMAX.(VGS=4.5V,ID=10A) ?LowCiss:Ciss | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR Description TheμPA2762UGRisN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofanotebookcomputer. Features ?Lowon-stateresistance ?RDS(on)1=13.5mΩMAX.(VGS=10V,ID=12A) ?RDS(on)2=22mΩMAX.(VGS=4.5V,ID=10A) ?LowCiss:Ciss | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheμPA2762UGRisN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofanotebookcomputer. Features ?Lowon-stateresistance ?RDS(on)1=13.5mΩMAX.(VGS=10V,ID=12A) ?RDS(on)2=22mΩMAX.(VGS=4.5V,ID=10A) ?LowCiss:Ciss | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS DESCRIPTION TheμPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=3 | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
3V,WIDEBANDMEDIUMPOWERSIMMICAMPLIFIER DESCRIPTION TheUPC2762TandUPC2763TareSiliconMonolithicintegratedcircuitswhicharemanufacturedusingtheNESATIIIprocess.TheNESATIIIprocessproducestransistorswithfTapproaching20GHz.Theseamplifiersweredesignedfor900MHzand1.9GHzreceiversincellular,cordlessteleph | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz ?Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=30mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz ?Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz ?Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=30mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz ?Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V ?Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz ?Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz ?Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
3V,SUPERMINIMOLDMEDIUMPOWERSIMMICAMPLIFIER | CEL California Eastern Labs | CEL | ||
3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS DESCRIPTION TheμPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES ?Supplyvoltage:VCC=2.7to3.3V ?Circuitcurrent:ICC=3 | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS DESCRIPTION TheμPC2762TB,μPC2763TBandμPC2771TBaresiliconmonolithicintegratedcircuitsdesignedasamplifierformobilecommunications.TheseICsoperateat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. TheseICismanufacturedusingNEC’s20GHzfTN | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC |
詳細(xì)參數(shù)
- 型號:
UPA2762UGR
- 制造商:
RENESAS
- 制造商全稱:
Renesas Technology Corp
- 功能描述:
MOS FIELD EFFECT TRANSISTOR
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
1950+ |
SOP-8 |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
RENESAS |
20+ |
SOP-8 |
63258 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
R |
21+ |
SOP-8 |
6000 |
絕對原裝現(xiàn)貨 |
詢價 | ||
ST/意法 |
23+ |
TO-252 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價 | ||
RENESAS/瑞薩 |
SOP-8 |
90000 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
RENESAS/瑞薩 |
23+ |
NA/ |
3350 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
RENESAS/瑞薩 |
22+ |
SOP-8 |
25000 |
只有原裝原裝,支持BOM配單 |
詢價 | ||
VBSEMI |
23+ |
SOP-8 |
17585 |
只做原裝 歡迎咨詢 |
詢價 | ||
RENESAS |
2310+ |
SOP-8 |
34960 |
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨 |
詢價 | ||
RENESAS |
21+ |
SOP |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 |
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