| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-channel600V,0.160廓,19APowerFLAT??8x8HVultralowgatechargeMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelMDmesh?VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=21A@TC=25℃ ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=175mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Lowinputcapacitanceandgatecharge Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-Channel650-V(D-S)SuperJunctionMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Lowinputcapacitanceandgatecharge Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-channel600V,0.135??20AMDmesh??IIPowerMOSFETinTO-220FP Description ThisseriesofdevicesimplementssecondgenerationMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemandingh | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-channel600V,0.135,20AMDmeshIIPowerMOSFETinPAKFPpackage ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationof MDmesh?technology. ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-channel600V,0.160廓,19APowerFLAT??8x8HVultralowgatechargeMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelMDmesh?VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel600V,0.135廓typ.,20AMDmesh??IIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
Lowinputcapacitanceandgatecharge Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-CHANNEL600V-0.125ohm-26ATO-247Zener-ProtectedMDmeshTMPowerMOSFET DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS |
詳細參數(shù)
- 型號：
STU26NM60
- 功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 26A I(D) | TO-220VAR
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
R |
2020+ |
TO-251 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
STM原廠目錄 |
24+ |
IPAK |
28500 |
授權代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售 |
詢價 | ||
ST |
22+ |
TO-251 |
28600 |
只做原裝正品現(xiàn)貨假一賠十一級代理 |
詢價 | ||
22+ |
NA |
3000 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | |||
VBsemi |
23+ |
TO251 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ST |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
ST |
20+ |
TO-251 |
25000 |
全新原裝現(xiàn)貨 假一賠十 |
詢價 | ||
ST |
21+ |
TO-251 |
10 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
STMicroelectronics |
2022+ |
TO-251-3 短引線,IPak,TO-251A |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
ST |
2208+ |
TO-251 |
2083 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 |
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