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STP26NM60ND

Low input capacitance and gate charge

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP26NM60ND

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

26NM60N

N-channel600V,0.160廓,19APowerFLAT??8x8HVultralowgatechargeMDmesh??IIPowerMOSFET

Description ThisdeviceisanN-channelMDmesh?VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB26NM60N

N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB26NM60N

iscN-ChannelMOSFETTransistor

DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STB26NM60ND

iscN-ChannelMOSFETTransistor

DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=21A@TC=25℃ ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=175mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STB26NM60ND

Lowinputcapacitanceandgatecharge

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF26NM60N

N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF26NM60N

N-Channel650-V(D-S)SuperJunctionMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

STF26NM60N

iscN-ChannelMOSFETTransistor

DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數

  • 型號：

    STP26NM60ND

  • 制造商：

    STMicroelectronics

  • 功能描述：

    N-CHANNEL 600 V, 0.144 OHM TYP., 21 A FDMESH(TM) II POWER MO - Rail/Tube

  • 功能描述：

    MOSFET N-CH 600V 21A TO220

  • 功能描述：

    Single N-Channel 650 V 0.175 Ohm 190 W Through Hole Power Mosfet - TO-220-3

  • 功能描述：

    N-channel 600 V, 0.144 Ohm typ., 21 A, TO-220

供應商型號品牌批號封裝庫存備注價格
STMicroelectronics
24+
NA
3499
進口原裝正品優(yōu)勢供應
 詢價
ST
22+23+
TO-220
23700
絕對原裝正品全新進口深圳現貨
 詢價
ST
24+
TO-220
9860
一級代理
 詢價
ST/意法
23+
TO-220
10000
公司只做原裝正品
 詢價
22+
NA
3000
加我QQ或微信咨詢更多詳細信息,
 詢價
ST/意法
23+
TO-220
50000
全新原裝正品現貨,支持訂貨
 詢價
ST
22+
TO2203
9000
原廠渠道,現貨配單
 詢價
ST/意法
2022
TO-220
80000
原裝現貨,OEM渠道,歡迎咨詢
 詢價
TH/韓國太虹
2048+
TO-220
9851
只做原裝正品現貨!或訂貨假一賠十!
 詢價
ST/意法
22+
N
30000
十七年VIP會員,誠信經營，一手貨源，原裝正品可零售！
 詢價
更多STP26NM60ND供應商 更新時間2025-2-26 16:00:00

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