零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
9.4A,100VP-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
100VP-CHANNELMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
P-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
P-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
P-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
P-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
P-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
PanelsandPanelAccessories | PENTAIRPentair plc. All rights reserved. 濱特爾濱特爾集團(tuán) | PENTAIR | ||
PanelsandPanelAccessories | PENTAIRPentair plc. All rights reserved. 濱特爾濱特爾集團(tuán) | PENTAIR | ||
PanelsandPanelAccessories | PENTAIRPentair plc. All rights reserved. 濱特爾濱特爾集團(tuán) | PENTAIR | ||
PanelsandPanelAccessories | PENTAIRPentair plc. All rights reserved. 濱特爾濱特爾集團(tuán) | PENTAIR | ||
PanelsandPanelAccessories | PENTAIRPentair plc. All rights reserved. 濱特爾濱特爾集團(tuán) | PENTAIR | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-100V,-11A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -100V,-11A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-100V,-9A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-100V,-11A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -100V,-11A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-100V,-9A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
TO-220 |
10000 |
公司只做原裝正品 |
詢價 | ||
ST |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價 | ||
ST |
TO-220 |
93480 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ST |
22+ |
TO-220 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價 | ||
ST/意法 |
22+ |
TO-220 |
96225 |
詢價 | |||
ST |
23+ |
TO-220F |
8795 |
詢價 | |||
ST |
2016+ |
TO-220 |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價 | ||
ST |
23+ |
TO-220 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
STM |
12+/13+ |
TO-220AB |
36450 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||
ST |
24+ |
TO-220-3 |
2186 |
詢價 |
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