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CEP12P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-100V,-11A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP12P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-11A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-9A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU12P10

P-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FQB12P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB12P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-11.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQD12P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD12P10

100VP-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD12P10

P-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

FQD12P10

P-ChannelMOSFET

■Features ●VDS(V)=-100V ●ID=-9.4A(VGS=-10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

FQD12P10TM

100VP-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD12P10TM

P-channelEnhancementModePowerMOSFET

Features ?VDS=-100V,ID=-13A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FQI12P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP12P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF12P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU12P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU12P10

100VP-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HY12P10D

P-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

華羿微電華羿微電子股份有限公司

KSM12P10

100VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號(hào)：

    CEP12P10

  • 制造商：

    CET

  • 制造商全稱(chēng)：

    Chino-Excel Technology

  • 功能描述：

    P-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TO-220
1215+
TO-220
150000
全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng).
 詢價(jià)
CET
23+
TO220/3
5500
現(xiàn)貨,全新原裝
 詢價(jià)
CET
24+
TO2203
66
詢價(jià)
SR
23+
TO-220
5000
原裝正品,假一罰十
 詢價(jià)
CET
1822+
TO220
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
CET
20+
TO-220
36900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
CET
2022+
20
全新原裝 貨期兩周
 詢價(jià)
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
CET(華瑞)
2112+
TO-220(TO-220-3)
105000
50個(gè)/管一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
 詢價(jià)
CET/華瑞
23+
TO-220
10000
公司只做原裝正品
 詢價(jià)
更多CEP12P10供應(yīng)商 更新時(shí)間2025-1-5 11:04:00

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