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首頁 >12P10L-TND-R>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
12P10L-TND-R	文件：289.72 Kbytes Page：7 Pages	P-CHANNEL POWER MOSFET	UTCUnisonic Technologies 友順友順科技股份有限公司	UTC
A12P10	文件：2.00209 Mbytes Page：16 Pages	PanelsandPanelAccessories	PENTAIRPentair plc. All rights reserved. 濱特爾濱特爾集團(tuán)	PENTAIR
A12P10AL	文件：2.00209 Mbytes Page：16 Pages	PanelsandPanelAccessories	PENTAIRPentair plc. All rights reserved. 濱特爾濱特爾集團(tuán)	PENTAIR
A12P10C	文件：2.00209 Mbytes Page：16 Pages	PanelsandPanelAccessories	PENTAIRPentair plc. All rights reserved. 濱特爾濱特爾集團(tuán)	PENTAIR
A12P10G	文件：2.00209 Mbytes Page：16 Pages	PanelsandPanelAccessories	PENTAIRPentair plc. All rights reserved. 濱特爾濱特爾集團(tuán)	PENTAIR
A12P10SS	文件：2.00209 Mbytes Page：16 Pages	PanelsandPanelAccessories	PENTAIRPentair plc. All rights reserved. 濱特爾濱特爾集團(tuán)	PENTAIR
CEB12P10	文件：102.67 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-100V,-11A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB12P10	文件：893.13 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -100V,-11A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED12P10	文件：162.1 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-100V,-9A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED12P10	文件：969.11 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP12P10	文件：102.67 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-100V,-11A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP12P10	文件：893.13 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -100V,-11A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU12P10	文件：263.94 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU12P10	文件：162.1 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-100V,-9A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU12P10	文件：969.11 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
FQB12P10	文件：635.79 Kbytes Page：9 Pages	100VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB12P10	文件：333.33 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=-11.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FQD12P10	文件：624.66 Kbytes Page：9 Pages	100VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD12P10	文件：672.06 Kbytes Page：9 Pages	100VP-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD12P10	文件：1.01794 Mbytes Page：9 Pages	P-Channel100V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市中遠(yuǎn)芯科技有限公司	12P10LTO-252T/R	UTC/友順	24+	TO-252	144850	原裝現(xiàn)貨	詢價(jià)
深圳市國宇半導(dǎo)體科技有限公司	12P10L-TQ2-R	U	23+	TO-263	10000	公司只做原裝正品	詢價(jià)
深圳市河鋒鑫科技有限公司	12P10L-TQ2-R	U	TO-263	22+	6000	十年配單,只做原裝	詢價(jià)
深圳市躍創(chuàng)芯科技有限公司	12P10L-TQ2-R	U	22+	TO-263	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	12P10L-TQ2-R	U	22+	TO-263	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價(jià)
深圳市粵駿騰電子科技有限公司	12P10L-TQ2-T	UTC/友順	24+	TO263	100000	原裝現(xiàn)貨	詢價(jià)
深圳市華博特電子有限公司	12P10L-TQ2-T	UTC	20232024	TO263	6000	老牌代理,長(zhǎng)期現(xiàn)貨	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	12P10L低壓MOS管	UTC/友順	23+	TO-252	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市東來寶電子科技有限公司	12P10L低壓MOS管	UTC/友順	22+	TO-252	45500	鄭重承諾只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市鵬和科技有限公司	12P10-TN3-R	VBsemi	24+	TO-252	5000	只做原裝公司現(xiàn)貨	詢價(jià)

更多12P10L-TND-R供應(yīng)商更新時(shí)間2025-1-14 17:18:00

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