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首頁 >STL26NM60NIGBT>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
STP26NM60N	文件：1.12508 Mbytes Page：24 Pages	N-channel600V,0.135廓typ.,20AMDmesh??IIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP26NM60N	文件：1.14259 Mbytes Page：23 Pages	N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STP26NM60N	文件：317.35 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STP26NM60ND	文件：320.69 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STP26NM60ND	文件：1.35849 Mbytes Page：23 Pages	Lowinputcapacitanceandgatecharge Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STW26NM60	文件：233.16 Kbytes Page：9 Pages	N-CHANNEL600V-0.125ohm-26ATO-247Zener-ProtectedMDmeshTMPowerMOSFET DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STW26NM60	文件：350.72 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.135Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STW26NM60N	文件：398.44 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STW26NM60N	文件：1.14259 Mbytes Page：23 Pages	N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STW26NM60ND	文件：1.35849 Mbytes Page：23 Pages	Lowinputcapacitanceandgatecharge Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
STW26NM60ND	文件：398.58 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
STW26NM60N-H	文件：681.3 Kbytes Page：12 Pages	N-channel600V,0.135Ω,20ATO-247MDmesh?IIPowerMOSFET Features ■100avalanchetested ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance Application ■Switchingapplications Description Thisseriesofdevicesimplementssecond generationMDmesh?technology.This revolutionaryPowerMOSFETassociatesanew verticalstruc	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
W26NM60	文件：233.16 Kbytes Page：9 Pages	N-CHANNEL600V-0.125ohm-26ATO-247Zener-ProtectedMDmeshTMPowerMOSFET DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市明嘉萊科技有限公司	STL26NM60NIGBT	ST/意法	24+	NA	860000	明嘉萊只做原裝正品現(xiàn)貨	詢價
深圳市科雨電子有限公司	STL26NM60NIGBT模塊	ST/意法	12	A26	100	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳市威爾健半導(dǎo)體有限公司	STL26NM60NIGBT模塊	ST/意法	23+	QFN	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
中科航電（深圳）電子集團(tuán)有限公司	STL272D	ST		原廠原封	36900	集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)	詢價
深圳市星佑電子有限公司	STL272D	ST	22+	原廠原封	16900	支持樣品原裝現(xiàn)貨提供技術(shù)支持!	詢價
深圳市一線半導(dǎo)體有限公司	STL272P		24+	DIP	2000	本站現(xiàn)貨庫存	詢價
深圳市安富世紀(jì)電子有限公司	STL27N15	ST	20+	DFN5X6	10323	終端可以免費(fèi)供樣,支持BOM配單!	詢價
深圳市斌騰達(dá)科技有限公司	STL285N4F7AG	STMicroelectronics	21+	PowerFlat?(5x6)	3000	100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)!	詢價
深圳市正納電子有限公司	STL285N4F7AG	NA	23+	NA	26094	10年以上分銷經(jīng)驗原裝進(jìn)口正品,做服務(wù)型企業(yè)	詢價
深圳市易訊博科技有限公司	STL285N4F7AG		22+	NA	3000	加我QQ或微信咨詢更多詳細(xì)信息,	詢價

更多STL26NM60NIGBT供應(yīng)商更新時間2025-1-7 19:09:00

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