STL17N60M6

N-channel 600 V, 300 m typ., 10 A, MDmeshTM M6 Power MOSFET in a PowerFLAT? 8x8 HV package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STL18N60M2

Marking：18N60M2；Package：PowerFLAT；N-channel 600 V, 0.278 廓 typ., 9 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh?M2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencyco

STL18N60M6

N-channel 600 V, 255 m typ., 9 A, MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof

STL19N3LLH6AG

Automotive-grade N-channel 30 V, 23 mΩ typ., 10 A, STripFETTM H6 Power MOSFET in a PowerFLAT 5x6 package

Features ?AEC-Q101qualified ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss ?Logiclevel ?Wettableflankpackage Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingtheSTripFET?H6 technologywithanewtrenc

STL19N60M6

N-channel 600 V, 255 m typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof

STL200N45LF7

Marking：200N45F7；Package：PowerFLAT；N-channel 45 V, 1.4 mΩ typ., 120 A STripFET ? F7 Power MOSFET in a PowerFLAT? 5x6 package

Features ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFET?F7technologywithanenhancedtrench

STL20NF20

Marking：20NF20；Package：PowerFLAT；N-channel 200 V, 0.10 Ω, 15 A PowerFLAT? (5x6) low gate charge STripFET? Power MOSFET

Features ■Exceptionaldv/dtcapability ■Lowgatecharge ■100avalanchetested Application ■Switchingapplications Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFET?process hasspecificallybeendesignedtominimizeinput capacitanceandgatec

STL20NM20N

Marking：L20NM20N；Package：PowerFLAT；N-CHANNEL 200V - 0.088ohm - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET

GeneralFeatures ■WORLDWIDELOWESTGATECHARGE ■TYPICALRDS(on)=0.088? ■IMPROVEDDIE-TO-FOOTPRINTRATIO ■VERYLOWPROFILEPACKAGE(1mmMAX) ■VERYLOWTHERMALRESISTANCE ■LOWGATERESISTANCE ■LOWINPUTCAPACITANCE ■HIGHdv/dtandAVALANCHECAPABILITIES DESCRIPTION This200VMO

STL210N4F7AG

Automotive-grade N-channel 40 V, 1.3 m typ., 120 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 package

Features ?Designedforautomotiveapplicationsand AEC-Q101qualified ?AmongthelowestRDS(on)onthemarket ?Excellentfigureofmerit(FoM) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness ?Wettableflankpackage Description ThisN-channelPowerMOSFETutilizes

STL210N4LF7AG

Automotive N-channel 40 V, 1.35 m typ., 120 A, STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package

Features ?AEC-Q101qualified ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness ?Wettableflankpackage Description ThisN-channelPowerMOSFETutilizesSTripFETF7technologywithanenhanced t