STL12N60M6

N-channel 600 V, 390 m typ., 6.4 A MDmeshTM M6 Power MOSFET in a PowerFLAT? 5x6 HV package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STL12N65M5

Very low intrinsic capacitance

Description ThisdeviceisanN-channelMDmesh?VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedam

STL13N60M2

Low gate input resistance

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.Itis

STL13NM60N

N-channel 600 V, 0.320 廓, 10 A PowerFLAT??(8x8) HV MDmesh??II Power MOSFET

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

STL150N3LLH5

N-channel 30 V - 0.0014 廓 - 35 A - PowerFLAT??(6x5) STripFET??V Power MOSFET

Description ThisSTripFET?VPowerMOSFETtechnologyisamongthelatestimprovements,whichhavebeenespeciallytailoredtoachieveverylowon-stateresistanceprovidingalsooneofthebest-in-classFOM. Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Hig

STL15N60DM6

N-channel 600 V, 295 m typ., 8.5 A, MDmesh DM6 Power MOSFET in a PowerFLAT 5x6 HV package

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

STL160N3LLH6

N-channel 30 V, 0.0011 廓, 35 A PowerFLAT??5x6 STripFET??VI DeepGATE??Power MOSFET

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthe6thgenerationofSTripFET?DeepGATE?technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistance

STL160N4F7

Marking：160N4F7；Package：PowerFLAT；N-channel 40 V, 2.1 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFETF7technologywithanenhanced trench

STL165N10F8AG

Marking：165N10F8；Automotive N?channel 100 V, 3.2 m? max., 158 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features ?AEC-Q101qualified ?MSL1grade ?175°Cmaximumoperatingjunctiontemperature ?100%avalanchetested ?LowgatechargeQg ?Wettableflankpackage Applications ?Automotivemotorcontrol ?Electromobility Description TheSTL165N10F8AGisa100VN-channelenhancem

STL16N60M6

N-channel 600 V, 0.30 typ., 8 A MDmesh? M6 Power MOSFET in a PowerFLAT? 5x6 HV package

Features ?Reducedswitchinglosses ?LowerRDS(on)xareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporates themostrecentadvancementstothewell-known andconsolidatedMDmeshfamilyof