STL

SOFT-TERMINAL

STL100N3LLH6

Marking：100N3LLH6；Package：PowerFLAT；N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT? (5x6)STripFET? VI DeepGATE? Power MOSFET

Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Highavalancheruggedness ■Lowgatedrivepowerlosses ■Verylowswitchinggatecharge Application ■Switchingapplications Description Thisproductutilizesthe6thgenerationofdesign rules

STL100N3LLH7

Marking：100N3LLH7；Package：PowerFLAT；N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT? (5x6) STripFET? VII DeepGATE? Power MOSFET

Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Highavalancheruggedness Application ■Switchingapplications Description Thisdeviceutilizesthe7thgenerationofdesign rulesofST’sproprietarySTripFET?technology, withanewgatestructure.Th

STL105DN4LF7AG

Marking：105DN4L；Package：PowerFLAT；Automotive-grade dual N-channel 40 V, 3.5 mΩ typ., 40 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 DI

Features ?AEC-Q101qualified ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness ?Wettableflankpackage Applications ?Switchingapplications Description ThisN-channelPowerMOSFETutilizes

STL105N4LF7AG

Marking：105N4LF7；Package：PowerFLAT；Automotive-grade N-channel 40 V, 3.0 mΩ typ., 105 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 package

Features ?AEC-Q101qualified ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness ?Wettableflankpackage Applications ?Switchingapplications Description ThisN-channelPowerMOSFETutilizes

STL10LN80K5

Marking：10LN80K5；Package：PowerFLAT；N-channel 800 V, 0.59 Ω typ., 6 A MDmesh? K5 Power MOSFET in a PowerFLAT? 5x6 VHV package

Features ?Industry’slowestRDS(on)xarea ?Industry’sbestfigureofmerit(FoM) ?Ultra-lowgatecharge ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh?K5 technolog

STL10N60M2

Marking：10N60M2；Package：PowerFLAT；N-channel 600 V, 0.580 廓 typ., 5.5 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description ThisdeviceisanN-channelPowerMOSFET developedusinganewgenerationofMDmesh? technology:MDmeshIIPlus?lowQg.This revolutionaryPowerMOSFETassociatesa verticalstructuretothecompany'sstriplayoutto yieldoneoftheworld'sloweston-resistanceand gatecharge

STL10N60M6

N-channel 600 V, 550 m typ., 5.5 A, MDmeshTM M6 Power MOSFET in a PowerFLAT? 5x6 HV package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STL10N65M2

N-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STL110N4F7AG

Automotive-grade N-channel 40 V, 3.3 mΩ typ., 108 A STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package

Features ?AEC-Q101qualified ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Description ThisN-channelPowerMOSFETutilizes STripFET?F7technologywithanenhanced trenchgatestructuretha