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HGTD3N60C3

6A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTD3N60C3andHGTD3N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

HARRIS

Harris Corporation

HGTD3N60C3S

6A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTD3N60C3andHGTD3N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

HARRIS

Harris Corporation

HGTD3N60C3S

6A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTD3N60C3S

6A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

HGTP3N60C3

6A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

HGTP3N60C3

6A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTP3N60C3D

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

HARRIS

Harris Corporation

HGTP3N60C3D

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTP3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

HGTP3N60C3D

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

Description TheHGTP3N60C3D,HGT1S3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuch

HARRIS

Harris Corporation

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HARRIS/哈里斯
22+
TO-220
5623
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HARRIS
22+
TO-220
8900
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HARRIS
TO-220
699839
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
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HARRIS
23+
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489
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ST/意法
23+
TO-220
10000
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22+
NA
3000
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ST
22+
TO220AB
9000
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ST/意法
23+
N
11200
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ST/意法
22+
N
30000
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STMicroelectronics
2022+
TO-220AB
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
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更多STGP3N60C3供應(yīng)商 更新時(shí)間2025-1-18 16:23:00