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HGTD3N60C3S

6A, 600V, UFS Series N-Channel IGBTs

Description TheHGTD3N60C3andHGTD3N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

HARRIS

Harris Corporation

HGTD3N60C3S

6A, 600V, UFS Series N-Channel IGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

HGTD3N60C3S

6A, 600V, UFS Series N-Channel IGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTD3N60C3S9A

6A, 600V, UFS Series N-Channel IGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTD3N60C3S9A

Package：TO-252-3，DPak（2 引線 + 接片），SC-63；包裝：管件 類別：分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 6A 33W TO252AA

ONSEMION Semiconductor

安森美半導體安森美半導體公司

HGTD3N60C3

6A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTD3N60C3andHGTD3N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

HARRIS

Harris Corporation

HGTP3N60C3

6A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTP3N60C3

6A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

HGTP3N60C3D

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

HARRIS

Harris Corporation

HGTP3N60C3D

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTP3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

HGTP3N60C3D

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

Description TheHGTP3N60C3D,HGT1S3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuch

HARRIS

Harris Corporation

詳細參數(shù)

  • 型號：

    HGTD3N60C3S

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

  • 制造商：

    Harris Corporation

供應商型號品牌批號封裝庫存備注價格
INTERSIL
06+
原廠原裝
5132
只做全新原裝真實現(xiàn)貨供應
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
INTERSIL
0018+
TO-251-3
450
就找我吧!--邀您體驗愉快問購元件!
 詢價
INTERSIL
23+
TO-252TO-251
10000
公司只做原裝正品
 詢價
INTERSIL
23+
TO-251-3
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INTERSIL
22+
TO-251-3
6000
十年配單,只做原裝
 詢價
INTERSIL
TO-251-3
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
INTERSIL
23+
TO-252TO-251
6000
原裝正品，支持實單
 詢價
HARRIS
2023+環(huán)保現(xiàn)貨
TO-252
18000
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
 詢價
INTERSIL
23+
NA/
3700
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
更多HGTD3N60C3S供應商 更新時間2025-1-18 10:32:00

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