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STB11NM80

N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET

Description TheMDmesh?associatesthemultipledrainprocesswiththecompany’sPowerMesh?horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB11NM80

Marking：B11NM80；Package：D2PAK；N-channel 800 V, 0.35 Ω, 11 A MDmesh? Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220, TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB11NM80

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STB11NM80

N-channel 800 V - 0.35 廓 - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh??Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB11NM80

N-channel 800 V, 0.35 廓, 11 A MDmesh??Power MOSFET TO-220, TO-220FP, D2PAK, TO-247

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB11NM80_V01

N-channel 800 V, 0.35 Ω, 11 A MDmesh? Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220, TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB11NM80_07

N-channel 800 V - 0.35 廓 - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh??Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF11NM80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STF11NM80

N-CHANNEL800V-0.35ohm-11ATO-220/FP/D2PAK/TO-247MDmeshPowerMOSFET

Description TheMDmesh?associatesthemultipledrainprocesswiththecompany’sPowerMesh?horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF11NM80

N-channel800V-0.35廓-11A-TO-220/FP-D2PAK-TO-247MDmesh??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數(shù)

  • 型號：

    STB11NM80

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh?Power MOSFET

供應商型號品牌批號封裝庫存備注價格
ST
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
ST
23+
TO-263
8795
詢價
ST
2016+
TO-263
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
ST
23+
TO-263
3200
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
 詢價
ST
2020+
TO220
5000
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
ST
22+23+
TO-263
16686
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
ST
18+
TO-263
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
ST
24+
TO-263
90000
一級代理商進口原裝現(xiàn)貨、假一罰十價格合理
 詢價
ST
2020+
TO-263
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
ST
24+
D2PAK
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
更多STB11NM80供應商 更新時間2025-2-28 13:00:00

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