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SSS10N60B

600V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SSS10N60B

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SSW10N60B

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

STGB10N60L

N-CHANNEL10A-600VD2PAKLOGICLEVELIGBT

N-CHANNEL10A-600VD2PAKLOGICLEVELIGBT ■HIGHINPUTIMPEDANCE(VOLTAGEDRIVEN) ■VERYLOWON-VOLTAGEDROP(Vcesat) ■LOWTHRESHOLDVOLTAGE(LOGICLEVELINPUT) ■HIGHCURRENTCAPABILITY ■OFFLOSSESINCLUDETAILCURRENT ■SURFACE-MOUNTINGD2PAK(TO-263)POWERPACKAGEINTUBE(NOSUFFIX)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10N60

N-CHANNEL10A-600VTO-220LOGICLEVELIGBT

N-CHANNEL10A-600VTO-220LOGICLEVELIGBT ■HIGHINPUTIMPEDANCE(VOLTAGEDRIVEN) ■VERYLOWON-VOLTAGEDROP(Vcesat) ■LOWTHRESHOLDVOLTAGE(LOGICLEVELINPUT) ■HIGHCURRENTCAPABILITY ■OFFLOSSESINCLUDETAILCURRENT APPLICATIONS ■ELECTRONICIGNITION ■LIGHTDIMMER ■STATICRELAY

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10N60L

N-CHANNEL10A-600VTO-220LOGICLEVELIGBT

N-CHANNEL10A-600VTO-220LOGICLEVELIGBT ■HIGHINPUTIMPEDANCE(VOLTAGEDRIVEN) ■VERYLOWON-VOLTAGEDROP(Vcesat) ■LOWTHRESHOLDVOLTAGE(LOGICLEVELINPUT) ■HIGHCURRENTCAPABILITY ■OFFLOSSESINCLUDETAILCURRENT APPLICATIONS ■ELECTRONICIGNITION ■LIGHTDIMMER ■STATICRELAY

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SVF10N60AT

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SVF10N60T

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SVFP10N60CAFJ

10A,600VN-CHANNELMOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVFP10N60CAFJ

10A,600VN-CHANNELMOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVFP10N60CAFJ

10A,600VN-CHANNELMOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVFP10N60CAFJ

10A,600VN-CHANNELMOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVFP10N60CAFJH

10A,600VN-CHANNELMOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVFP10N60CAFJH

10A,600VN-CHANNELMOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVFP10N60CAFJH

10A,600VN-CHANNELMOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SW10N60

N-channelMOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

SW10N60D

N-channelTO-220FMOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

SWF10N60

N-channelMOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

SWP10N60

N-channelMOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

SWP10N60

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

詳細(xì)參數(shù)

  • 型號:

    SSS10N60B

  • 功能描述:

    MOSFET NCh/600V/5.1a/0.8Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
TO 220
155358
明嘉萊只做原裝正品現(xiàn)貨
詢價
FAIRCHILD/仙童
17+
TO-220
31518
原裝正品 可含稅交易
詢價
onsemi(安森美)
23+
TO-220F
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
FSC
2016+
TO-220F
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
詢價
FAIRCHILD
24+
TO-220
242
詢價
FSC
23+
TO-220
20000
原裝正品,假一罰十
詢價
Fairchi
24+
TO220F
6000
進(jìn)口原裝正品假一賠十,貨期7-10天
詢價
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
FCS
24+
TO220F-3L
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
詢價
FSC
23+
TO-220F
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
更多SSS10N60B供應(yīng)商 更新時間2025-1-11 15:40:00