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SPBI11N60C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?150°Coperatingtemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI11N60C3

iscN-ChannelMOSFETTransistor

?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPI11N60C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI11N60C3

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI11N60C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI11N60C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?150°Coperatingtemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N60C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N60C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?150°Coperatingtemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N60C3

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N60C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    SPB11N60C3XT

  • 制造商：

    Infineon Technologies AG

  • 功能描述：

    Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) TO-263

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
8000
只做原裝現(xiàn)貨
 詢價
INFINEON/英飛凌
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
INFINEON
21+
TO-263
1000
原裝現(xiàn)貨假一賠十
 詢價
I
P-TO263-3-2
22+
6000
十年配單,只做原裝
 詢價
INFINEON
2022+
TO-263
57550
詢價
INFINEON/英飛凌
23+
NA/
1000
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
I
22+
P-TO263-3-2
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
Infineon(英飛凌)
21+
TO-263
1000
原裝現(xiàn)貨,假一罰十
 詢價
I
24+
P-TO263-3-2
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
INFINEON
24+
TO-263
56000
公司進口原裝現(xiàn)貨 批量特價支持
 詢價
更多SPB11N60C3XT供應(yīng)商 更新時間2025-3-27 15:00:00

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